A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED

Yang, Bin; Guo, Zhiyou; Xie, Nan; Zhang, Pan-Jun; Li, Jing; Li, Fangzheng; Lin, Hong; Cai, Jun

doi:10.1088/1674-1056/23/4/048502

Cited by 7 publications

(3 citation statements)

References 23 publications

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“…In order to understand the difference between carrier leakage and injection in four LDs, the energy band diagrams of the four LDs were plotted at an injection current of 120 mA, as shown in Figure 6. Due to lattice mismatch, piezoelectric and spontaneous polarization fields, the energy band will bend and deviate from the ideal state [33]. The p-side layers of LD1, LD2 and LD3 are the same, so their energy bands in the p-side region are similar.…”

Section: Resultsmentioning

confidence: 99%

Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes

Gao,

Yang,

Jia

et al. 2024

Nanomaterials

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The injection and leakage of charge carriers have a significant impact on the optoelectronic performance of GaN-based lasers. In order to improve the limitation of the laser on charge carriers, a slope-shape hole-barrier layer (HBL) and electron-barrier layer (EBL) structure are proposed for near-UV (NUV) GaN-based lasers. We used Crosslight LASTIP for the simulation and theoretical analysis of the energy bands of HBL and EBL. Our simulations suggest that the energy bands of slope-shape HBL and EBL structures are modulated, which could effectively suppress carrier leakage, improve carrier injection efficiency, increase stimulated radiation recombination rate in quantum wells, reduce the threshold current, improve optical field distribution, and, ultimately, improve laser output power. Therefore, using slope-shape HBL and EBL structures can achieve the superior electrical and optical performance of lasers.

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Section: Resultsmentioning

confidence: 99%

Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes

Gao,

Yang,

Jia

et al. 2024

Nanomaterials

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“…The current diffusion issue and its related current crowding effect (CCE) are important for the optoelectrical devices, such as laser diode (LD) and light emitting diodes (LEDs). [1][2][3] The theory of current spreading under a linear stripe top contact geometry has been reported by Thompson. [4] They claimed that the current density is inversely square dependent on the distance from the metal electrode edge.…”

Section: Introductionmentioning

confidence: 99%

Current diffusion and efficiency droop in vertical light emitting diodes*

Wan¹,

Li²,

Liu³

et al. 2019

Chinese Phys. B

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Current diffusion is an old issue, nevertheless, the relationship between the current diffusion and the efficiency of light emitting diodes (LEDs) needs to be further quantitatively clarified. By incorporating current crowding effect (CCE) into the conventional ABC model, we have theoretically and directly correlated the current diffusion and the internal quantum efficiency (IQE), light extraction efficiency (LEE), and external quantum efficiency (EQE) droop of the lateral LEDs. However, questions still exist for the vertical LEDs (V-LEDs). Here firstly the current diffusion length L s(I) and L s(II) have been clarified. Based on this, the influence of CCE on the EQE, IQE, and LEE of V-LEDs were investigated. Specifically to our V-LEDs with moderate series resistivity, L s(III) was developed by combining L s(I) and L s(II), and the CCE effect on the performance of V-LEDs was investigated. The wall-plug efficiency (WPE) of V-LEDs ware investigated finally. Our works provide a deep understanding of the current diffusion status and the correlated efficiency droop in V-LEDs, thus would benefit the V-LEDs' chip design and further efficiency improvement.

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“…Experimental evidence suggests that the strain-compensated superlattice structure can constrain the leakage of electrons from the active zone and significantly increase the injection efficiency of holes into the active zone. Yang Bin et al 12 designed a novel 3 nm GaN/4 nm Al 0.05 Ga 0.85 N/3 nm In 0.05 Ga 0.85 N multilayer LQB structure. When the conventional GaN LQB is replaced by a multilayer LQB, a deep potential well is formed compared to the conventional barrier structure, which restricts more electrons and increases the number of holes tunnelling from p-side to LQB.…”

mentioning

confidence: 99%

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

Mu,

Dong,

Jia

et al. 2024

ECS J. Solid State Sci. Technol.

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An asymmetric InAlGaN/GaN superlattice barrier structure without the first quantum barrier layer (FQB) is designed, and its effect on the optoelectronic performance of GaN-based green laser diode (LD) has been investigated based on simulation experiment and analytical result. It is found that, compared with conventional GaN barrier LD, device performance is significantly improved by using FQB-free asymmetric InAlGaN/GaN superlattice barrier structure, including low threshold current, high output power, and high photoelectric conversion efficiency. The threshold current of LD with novel structure is 16.19 mA, which is 22.46% less than GaN barrier LD. Meanwhile, the output power is 110.69 mW at an injection current of 120 mA, which is 16.20% higher compared to conventional LD, and the wall-plug efficiency has an enhancement of 9.5%, reaching 20.27%. FQB-free asymmetric InAlGaN/GaN superlattice barrier layer can reduce optical loss, suppress the polarization effect and improve the carrier injection efficiency, which is beneficial to improve output power and photoelectric conversion efficiency. The novel epitaxial structure provides theoretical guidance and data support for improving the optoelectronic performance of GaN-based green LD.

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A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED

Cited by 7 publications

References 23 publications

Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes

Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes

Current diffusion and efficiency droop in vertical light emitting diodes*

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

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