A GaN Electromechanical Tunable Grating on Si Substrate

Sameshima, H.; Tanae, T.; Hane, Kazuhiro

doi:10.1109/lpt.2010.2102346

Cited by 9 publications

(5 citation statements)

References 14 publications

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“…Previously, we have successfully reported a kind of not cut-through free-standing GaN membrane grating coupler and waveguide at visible wavelengths [8]. Sameshima et al [9,10] fabricated a flat GaN/HfO 2 membrane by removing Si substrate with DRIE or XeF 2 gas isotropical etching, and achieved free-standing GaN gratings with comb-drive actuator. Yang et al [5,11] get suspended GaN microstructures fabricated by the GaN-on-patterned-silicon technique.…”

Section: Introductionmentioning

confidence: 99%

Design of free-standing GaN strip waveguide and grating couplers

Liu

Wang

et al. 2016

Optik

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Section: Introductionmentioning

confidence: 99%

Design of free-standing GaN strip waveguide and grating couplers

Liu

Wang

et al. 2016

Optik

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“…With the development of microelectromechanical systems (MEMS) technology, MEMS tunable gratings have attracted extensive interests in the fields of microelectronics. Pitch-tunable grating is an important category of MEMS tunable gratings [1,7]. Hane et al [1] realized a pitch-tunable Si grating which showed a broad reflection in the wavelength longer than the grating period.…”

Section: Introductionmentioning

confidence: 99%

“…MEMS pitch-tunable grating on Gallium Nitride (GaN) has also been reported recently. It can be used in monolithic integration with the GaN light source and micro spectrometer [7]. For these pitch-tunable gratings, as the name implies, the period and filling factor can be modulated by changing driving voltage of the comb electrode, which shows bright prospects for optical telecoms and miniaturized spectrometers [8,11].…”

Section: Introductionmentioning

confidence: 99%

An Electromechanical Tunable Grating on Silicon-on-Insulator Platform

Gao

Shi

et al. 2014

KEM

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We report here the design and fabrication of an electromechanical tunable grating on silicon-on-insulator (SOI) wafer. The tunable grating consists of a submicron electrostatic comb actuator and an expandable freestanding grating. Rigorous coupled-wave analysis (RCWA) method is utilized to analyze the optical responses of freestanding grating with different periods and filling factors. Obvious shift of the resonant peaks is obtained by changing the grating period and the grating filling factor. The electromechanical tunable grating is realized on the silicon device layer by a combination of electron beam (EB) lithography, deep reactive ion etching (DRIE) and wet etching. Scanning electron microscope (SEM) micrographs indicate that the grating is well fabricated. Via applying biased voltage, the force generated by the electrostatic comb actuator can modulate periods and filling factors of the freestanding grating. The electromechanical tunable grating with simple fabrication process shows bright prospects for optical telecoms and miniaturized spectrometers.

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“…Considering the advanced silicon-MEMS technology and the new GaN-LED technology, GaN light sources on a silicon platform will be useful for several optical MEMS. 13,14 In this paper, a micro fluorescent analysis system integrating GaN-LED and Si-PD, and micro channel are fabricated by silicon-based micromachining. A highly-efficient GaN-LED grown on a silicon substrate by metal-organic chemical vapor deposition is used in this experiment.…”

Section: Introductionmentioning

confidence: 99%

Micro fluorescent analysis system integrating GaN-light-emitting-diode on a silicon platform

et al. 2012

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A micro fluorescent analysis system is proposed using silicon micromachining. GaN blue light-emitting diode (LED) monolithically integrated on a silicon substrate is used as a light source for the fluorescent analysis system. The blue light suits the excitation of several dyes used commonly in fluorescent analysis. Silicon photodiode (Si-PD) that matches the visible and near infrared fluorescent wavelengths of dyes is integrated on a silicon substrate. Polydimethylsiloxane (PDMS) micro-channels are also stacked for flowing dye-sensitized liquid. Therefore, the proposed system is an integrated system that can be composed on a silicon platform, i.e. a bottom layer of Si-PD, a middle layer of GaN-LED on silicon substrate and a top layer of micro PDMS channel. An aperture is opened into the GaN-LED layer by deep reactive ion etching to create a ring-shaped GaN-LED and a through-hole for detection. The light from the ring-shaped GaN-LED in the middle layer excites the dye-sensitized liquid in the top micro-channel layer. The fluorescence emitted from dye is detected by the Si-PD on the bottom layer at an angle larger than 90 degrees from the direction of excitation. Therefore, the detection optics consist basically of a dark-field illumination optical system. In order to evaluate the performance of the integrated system, fluorescence of fluorescein isothiocyanate (FITC) solution flowing in the micro channel is measured. From the measurement, the noise, sensitivity and limit of detection in the fabricated system are evaluated for FITC dye to be 0.57 pA, 1.21 pA μM(-1) and 469 nM, respectively. From these results, a compact fluorescence analysis system is demonstrated.

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A GaN Electromechanical Tunable Grating on Si Substrate

Cited by 9 publications

References 14 publications

Design of free-standing GaN strip waveguide and grating couplers

Design of free-standing GaN strip waveguide and grating couplers

An Electromechanical Tunable Grating on Silicon-on-Insulator Platform

Micro fluorescent analysis system integrating GaN-light-emitting-diode on a silicon platform

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