used to harvest these mechanical vibration energies. The cooling by the flows not only solves the serious heat dissipation problem to significantly increase device stability but also offers a new approach to sense its environment. In response to the flow, the kinetic energy will be transformed into electrical energy due to the piezoelectric effect, and the dissipation of the accumulated heat effect also modulates the performance when the LED is operated to emit light. Real-time flow rate detection, as well as illumination, can be simultaneously achieved for the membrane LED, and the detected information is able to be transmitted using the modulated light, which generates a smart device with multiple functionalities. The modulation speed can be significantly increased by using III-nitride micro-and nano-LEDs. [25][26][27] With the utilization of laser lift-off, mechanical release, or wet chemical etching techniques, the membrane LED also provides a promising approach to develop transferrable multifunctional devices for comprehensive applications. [28][29][30][31] A GaN LED has been transferred from a silicon substrate to a polymer substrate for biomedical applications. [32] A purely chemical solution is demonstrated to transfer substrateless GaN LED grown on a C-rich SiC buffer layer to flexible dielectric plates. [33] On the basis of the III-nitride-onsilicon platform, the membrane LED can be easily obtained by etching the bottom silicon substrate, which offers a wafer-level fabrication technology for mass production. [34] Here, the fabrication and characterization of a membrane LED sensor (LED-S) on a III-nitride-on-silicon wafer [35][36][37][38][39] is proposed. Both silicon removal and backside III-nitride thinning are conducted to obtain a membrane device architecture with improved performance. [40] In response to a flow rate change, the membrane LED can produce an induced current, which is highly sensitive to the flow rate. The light emission of the membrane LED is modulated, which makes it possible to obtain visible light communication to connect the membrane LED-S with the Internet.The membrane LED-S is implemented on a 2 in. III-nitrideon-silicon platform. When growing GaN on silicon, crack formation occurs during cooling down, due to expansion coefficient mismatch. To overcome the challenging problem, Al rich buffer layers are needed, which contribute to the epitaxial growth of high-quality III-nitride films on a (111) silicon substrate by metal-organic chemical vapor phase deposition. [41,42] The total thickness of III-nitride epitaxial films is ≈5.14 µm. As shown in Figure 1a, the Al distribution in the epitaxial films is Figure 4. a) The current change at V = 2.5V of the membrane LED-S as a function of the flow rate. b) The induced currents in the membrane LED-S when the flow of 1.805 m s −1 is turned on and off, for various biases from 1 to 2.5 V. c) Same as in (b) in the LED on silicon. d) The EL spectra at a bias of 3.2 V as a function of the flow rate. www.advancedsciencenews.com