The diagnosability of a system is defined as the maximum number of faulty processors that the system can guarantee to identify, which plays an important role in measuring of the reliability of multiprocessor systems. In the work of Peng et al. in 2012, they proposed a new measure for fault diagnosis of systems, namely, g-good-neighbor conditional diagnosability. It is defined as the diagnosability of a multiprocessor system under the assumption that every fault-free node contains at least g fault-free neighbors, which can measure the reliability of interconnection networks in heterogeneous environments more accurately than traditional diagnosability. The k-ary n-cube is a family of popular networks. In this study, we first investigate and determine the R g -connectivity of k-ary n-cube for 0 g n: Based on this, we determine the g-good-neighbor conditional diagnosability of k-ary n-cube under the PMC model and MM Ã model for k ! 4; n ! 3 and 0 g n: Our study shows the g-good-neighbor conditional diagnosability of k-ary n-cube is several times larger than the classical diagnosability of k-ary n-cube.

A monolithic multicomponent system is proposed and implemented on a III-nitride-on-silicon platform, whereby two multiple-quantum-well diodes (MQW-diodes) are interconnected by a suspended waveguide. Both MQW-diodes have an identical low-In-content InGaN/Al0.10Ga0.90N MQW structure and are produced by the same fabrication process flow. When appropriately biased, both MQW-diodes operate under a simultaneous emission-detection mode and function as a transmitter and a receiver at the same time, forming an in-plane full-duplex light communication system. Real-time full-duplex audio communication is experimentally demonstrated using the monolithic multicomponent system in combination with an external circuit.

We propose, fabricate and demonstrate on-chip photonic integration of suspended InGaN/GaN multiple quantum wells (MQWs) devices on the GaN-on-silicon platform. Both silicon removal and back wafer etching are conducted to obtain membrane-type devices, and suspended waveguides are used for the connection between p-n junction InGaN/GaN MQWs devices. As an in-plane data transmission system, the middle p-n junction InGaN/GaN MQWs device is used as a light emitting diode (LED) to deliver signals by modulating the intensity of the emitted light, and the other two devices act as photodetectors (PDs) to sense the light guided by the suspended waveguide and convert the photons into electrons, achieving 1 × 2 in-plane information transmission via visible light. Correspondingly, the three devices can function as independent PDs to realize multiple receivers for free space visible light communication. Further, the on-chip photonic platform can be used as an active electro-optical sensing system when the middle device acts as a PD and the other two devices serve as LEDs. The experimental results show that the auxiliary LED sources can enhance the amplitude of the induced photocurrent.

We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode (LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junction InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.

Magnetization reversal and magnetic domain structures controlled by the magnetostatically induced stray field in perpendicular antiferromagnetically coupled [Pd∕Co]7∕Ru∕Co∕[Pd∕Co]7 multilayer were investigated by magnetic force microscopy. For the sample demagnetized in plane, field-induced ferromagnetic domains at the boundary of antiferromagnetic domains provide the nucleation channel. The ferromagnetic domains in the channel are parallel aligned along the applied field out of plane firstly, and then the magnetization reversal is dominated by the propagation of the ferromagnetic channels toward the region of antiferromagnetic domains. The sample demagnetized in perpendicular direction shows antiferromagnetic coupling state. Ultraslow reversal dynamics were observed under a perpendicular critical magnetic field (Hcri) in a long time. The reversal process can be explained by the inhomogeneous local stray field and the competition between magnetostatic energy and exchange energy.