We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode (LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junction InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.

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Here, we propose, fabricate and characterize GaN directional couplers for on-chip optical interconnect on a GaN-on-silicon platform. Suspended InGaN/GaN multiple-quantum-well diodes are adopted for both the transmitter and the receiver, and GaN directional couplers are used to achieve the light coupling between suspended waveguides that are directly connected to the transmitter and the receiver. The proposed on-chip optical interconnects are experimentally demonstrated by light propagation and in-plane data transmission using visible light. The light propagation images directly show that the emitted light can be laterally coupled into the suspended waveguide, and the guided light from the input waveguide then couples to the coupled waveguide due to the overlapped slab. The receiver detects the transmitted light from the coupled waveguide to complete the in-plane visible light communication process, as confirmed by pseudo-random binary sequence data and eye diagrams at the transmission rate of 30 Mbps.

We describe a double-sided process for the monolithic integration of a light-emitting diode (LED) and a Y-branch structure on a GaN-on-silicon platform. The suspended LED and highly confined waveguides are fabricated by silicon removal with back-side thinning of the suspended membrane. When the LED is turned on, part of the light emission is confined by a suspended rectangular waveguide, and the light propagates laterally. The guided light is then coupled into two branching rectangular waveguides and diffracted into the air at the output facets. The light output can be tuned by the LED, opening the potential for more sophisticated integrated photonic circuits.