GaN directional couplers for on-chip optical interconnect

Yuan, Jialei; Gao, Xumin; Yang, Yongchao; Zhu, Guixia; Yuan, Wei; Choi, H. W.; Zhang, Zhe; Wang, Yongjin

doi:10.1088/1361-6641/aa59ef

Cited by 17 publications

(6 citation statements)

References 37 publications

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“…GaN microcavities denote the optical dimensional confined GaN micro structures exhibiting singular performances or producing exotic effects, such as low‐threshold lasing, enhanced nonlinear conversion, and directional luminescence. During the past few years, numerous geometries of GaN‐based micro cavities have been investigated, including 1D photonic crystal cavities, [ 101–104 ] nanowire cavities, [ 105–109 ] nanowire waveguides, [ 110–114 ] micro disks, [ 6,115–144 ] etc. These cavities support single mode or multiple modes to realize strong light–matter coupling.…”

Section: Gan‐based Micro Cavitymentioning

confidence: 99%

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

Zhao

Liu

Wang

2022

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are even smaller, only a few MHz, which are far away from the requirement of fast and large data wireless transmission for VLC. [5] To enhance the data transmission rates, complex modulation schemes and/ or equalization have to be utilized, which, however, hinder the further developments and applications. In addition, Si-based optoelectronic devices, like Si PDs, a bluefiltering technology are still used currently for shorter wavelength visible light detection, which suffers from complexity and low light transmittance. Furthermore, considering the development and mature application of GaN-based devices, there is a trend to realize the multifunctional single chip integration. However, the relative low coupling efficiency in the GaNbased optoelectronic devices still cannot meet the requirements. In this case, it is important to develop novel GaN-based optoelectronic devices with superior performances as alternative for miniaturization, simplification, and integration. To solve these problems, the concept of incorporating GaN-based devices with exotic optical resonances has been proposed. [5] Surface plasmons (SPs), microcavities, such as whispering gallery modes (WGMs) and distributed Bragg reflectors (DBR) are common optical resonant structures to improve the performances of GaN-based devices. [6][7][8][9] SPs are intrinsic electromagnetic modes excited at the metal-dielectric interfaces, accompanied with the collective oscillation behaviors of free electrons on the metal-side surfaces. [10] Giant electric field enhancement generates at the interface with exponentially decay along the perpendicular direction. Inside the GaN-based devices, the excitation of SPs can greatly enhance the density of states of the electron-hole pairs and improve the competitiveness of the radiative recombination to the non-radiative recombination. [11] It has also been demonstrated tremendously in early works that using SPs enables a path to break the optical diffraction limit of the semiconductor lasers and boost the light-matter coupling intensities in subwavelength dimensions. [11][12][13][14][15][16][17] In addition, GaN-based microcavities, such as photonics crystals, DBR, and micro disks, can confine and manipulate light. [18][19][20] By matching one or more dimensions of the cavities to the wavelength of the confined light, exotic effects can be produced, such as enhanced luminescence, directional emission, low-threshold lasing, etc. When light illuminates microcavities, the confined electron-hole pairs interact with the cavity photons. Their interaction rate relative to the average Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro cavities, has attracted considerable interests for upgrading their performance, which can not only reveal the new coupling mechanism...

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Section: Gan‐based Micro Cavitymentioning

confidence: 99%

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

Zhao

Liu

Wang

2022

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“…Using this overlap, the light source and photodiode (PD) can be realized using the same MQW diode structure on the GaN-on-silicon platform. Combining the GaN passive components with the MQW diodes on a single chip, numerous PICs based on the GaN-on-silicon platform with various functions have been reported, 36 – 39 which are simple, compact, and flexible compared to other III–V integration schemes. Furthermore, an interesting phenomenon is observed: the GaN-based MQW structure functions as an electro-absorption modulator 40 , 41 with low power dissipation, compact structure, and relative low driving voltage 42 …”

Section: Introductionmentioning

confidence: 99%

Complete active–passive photonic integration based on GaN-on-silicon platform

Yan,

Fang,

Sun

et al. 2023

Adv. Photon. Nexus

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Suitable optoelectronic integration platforms enable the realization of numerous application systems at the chip scale and are highly anticipated in the rapidly growing market. We report a GaN-on-silicon-based photonic integration platform and demonstrate a photonic integrated chip comprising a light source, modulator, photodiode (PD), waveguide, and Y-branch splitter based on this platform. The light source, modulator, and PD adopt the same multiple quantum wells (MQWs) diode structure without encountering incompatibility problems faced in other photonic integration approaches. The waveguide-structure MQW electro-absorption modulator has obvious indirect light modulation capability, and its absorption coefficient changes with the applied bias voltage. The results successfully validate the data transmission and processing using near-ultraviolet light with peak emission wavelength of 386 nm. The proposed complete active-passive approach that has simple fabrication and low cost provides new prospects for next-generation photonic integration.

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“…In recent studies monolithic integration of active and passive components i.e. transmitters, receivers and interconnects are fabricated on the GaN-on-Si platform [4], [5].…”

Section: Introductionmentioning

confidence: 99%

Ion-Induced Electrical Isolation in GaN-Based Platform for Applications in Integrated Photonics

et al. 2019

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GaN based Photonic Integrated Circuits (PICs) have now become a global contender for their wide range of applications owing their physical characteristics. The GaN material system acts as a promising platform; compatible with silicon and sapphire substrates. Both the carrier transport and carrier removal techniques are vital to develop the efficient platform for the integration of photonic circuits. We demonstrate the carrier removal mechanism in silicon (Si) doped GaN (0001) epitaxially grown on c-plane sapphire wafer using ion engineering of the devices. Ion-engineered regions within the active layers of the device are modelled, fabricated and characterized to assess the isolation created. Helium and Carbon ions with predesigned doses and energies are used to irradiate the device structures. We have modelled and fabricated ion-engineered regions within the active layers and studied the carrier transport properties on said regions to isolate that particular part with either of active photonic components placed at the common platform. After ion irradiation, detailed analysis in terms of electric field dependent current characteristics, sheet resistance, carrier mobilities, activation energies, dark and photo currents under zero (ground) and multiple biases are examined to see the extent of charge leakage and to map the charge behavior under nominal operation. Device characteristics under wide regime of annealing temperatures ranging from 300 • C to 1000 • C are mapped to evaluate the thermal stability of implant driven isolated regions. Activation energies of implanted and parent regions has also been studied. The dark and photon driven electric currents at ground and under biased have been measured to investigate the photo-induced transport phenomenon.INDEX TERMS Ion implantation, electrical isolation, photonic integrated circuits, crosstalk.

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GaN directional couplers for on-chip optical interconnect

Cited by 17 publications

References 37 publications

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

Complete active–passive photonic integration based on GaN-on-silicon platform

Ion-Induced Electrical Isolation in GaN-Based Platform for Applications in Integrated Photonics

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