A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability

Abstract

To improve the logic stability of conventional multi-valued logic (MVL) circuits designed with a GaN-based resonate tunneling diode (RTD), we proposed a GaN/InGaN/AlGaN multi-quantum well (MQW) RTD. The proposed RTD was simulated through solving the coupled Schrodinger and Poisson equations in the numerical non-equilibrium Green’s function (NEGF) method on the TCAD platform. The proposed RTD was grown layer by layer in epitaxial technologies. Simulated results indicate that its current-voltage characteristic appears to have a wider total negative differential resistance region than those of conventional ones and an obvious hysteresis loop at room temperature. To increase the Al composite of AlGaN barrier layers properly results in increasing of both the total negative differential resistance region width and the hysteresis loop width, which is helpful to improve the logic stability of MVL circuits. Moreover, the complement resonate tunneling transistor pair consisted of the proposed RTDs or the proposed RTD and enhanced mode HEMT controlled RTD is capable of generating versatile MVL modes at different supply voltages less than 3.3 V, which is very attractive for implementing more complex MVL function digital integrated circuits and systems with less devices, super high speed linear or nonlinear ADC and voltage sensors with a built-in super high speed ADC function.

Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel

“…Let us consider the main equations of the combined self-consistent model of current transport in heterostructures with transverse transport [ 15 , 16 , 17 , 18 ], which is based on the formalism of envelope wave functions, which are solutions of the Schrödinger equation for an open system. The advantages of this model are its high level of validation at the initial part of the RTD I-V curve and its high degree of elaboration, which make it a suitable “verification basis” for building a compact model.…”

A novel quantum well RTD with intensive and continuous current oscillation in the bias voltage range higher than 3.15 V

“…3 (a) seems more complicated due to the above mentioned abnormal quantum size effect phenomena. Moreover, BSELs lower with increased bias voltage in the whole during which jumping, degeneration and separation of BSELs will occur as described in reference [9].…”

Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials

“…The heterogeneous integration of various forms of inorganic materials (which encompasses growing numbers of material types) into one electronic system is based on group III-nitride compound semiconductors [17][18][19][20][21][22][23][24][25][26][27][28] . Examples include the following: on-chip frequency upconversion [29] , nanomechanical optical detection [30,31] , solid-state neutron detection [32][33][34] , piezoelectric resonators and electrical and harmonic generators [35][36][37][38][39][40] , strain-gated transistors (SGTs) [41] , multiple-valued logic (MVL) circuits [42] , single-photon emission [43][44][45] , water splitting [46][47][48][49][50][51] , solar-blind photodetection [52] , pressure [53] , gas [54] , pH [55] , sensors, white light generation from light-emitting diodes (LEDs) [56][57][58] and from laser diodes (LDs) [59] , metal-oxidesemiconductor field-effect transistors (MOSFETs) [60]…”