2016
DOI: 10.1007/s10825-016-0835-0
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A Gaussian model for recombination via carrier-trap distributions in organic solar cells

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Cited by 3 publications
(2 citation statements)
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“…In the case of trap‐assisted recombination, the impurity creates a distribution of localized energy levels in the bandgap at which one charge carrier gets trapped and then recombines with the respective free charge carrier of the opposite sign. [ 35,38–41 ] According to the Shockley‐Read‐Hall statistics, trap‐assisted recombination losses are most detrimental for the device performance in the case of deep traps that are located near the midgap of the semiconductor, facilitating efficient recombination through the trap‐states. [ 40,41 ]…”
Section: Introductionmentioning
confidence: 99%
“…In the case of trap‐assisted recombination, the impurity creates a distribution of localized energy levels in the bandgap at which one charge carrier gets trapped and then recombines with the respective free charge carrier of the opposite sign. [ 35,38–41 ] According to the Shockley‐Read‐Hall statistics, trap‐assisted recombination losses are most detrimental for the device performance in the case of deep traps that are located near the midgap of the semiconductor, facilitating efficient recombination through the trap‐states. [ 40,41 ]…”
Section: Introductionmentioning
confidence: 99%
“…These models play a fundamental role in predicting solar cell performance and in the optimization of their design to enhance efficiency. In the context of solar cells, numerical simulation and electrical models are thus indispensable resources for exploring new materials and technologies [18][19][20][21].…”
Section: Introductionmentioning
confidence: 99%