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Temperature-dependent dc characteristics of an In Ga As ∕ In Ga As P heterojunction bipolar transistor with an InGaAsP spacer and a composite-collector structure

The evolution of the base current of GaInP/GaAs Heterojunction Bipolar Transistors (HBTs) is studied as a function of the stressing current during the burn-in. It is found that the base current decreases in an exponential way with the involved time constants depending themselves on the stressing current in a way proportional to I -2 . Such behaviour is explained considering two independent recombination centres that are deactivated during the stressing by the capture of two electrons. These two recombination centres might be H + and the quasi complex Si + -H + which capture two electrons each becoming H − and SiH.