A general design methodology for the optimal multiple-field-limiting-ring structure using device simulator

Xu, Chengpei; Sin, J.K.O.; Shen, Jie; Huai, Yong-jin; Li, Ruizhen; Wu, Yu; Bao-wei, Kang

doi:10.1109/ted.2003.815132

Cited by 23 publications

(13 citation statements)

References 16 publications

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“…If the p-island is placed out of the previous p-island's depletion region, the electric field around the previous p-island will reach the critical breakdown field before the next p-island starts to clamp the voltage. These voltage clamping effects of the p-islands are similar to those in the floating field rings widely adopted for the edge termination of power devices [27,28]. Figure 4 shows the potential of the p-islands in the proposed MOSFET as a function of the off-state drain voltage.…”

Section: Device Structure and R Sp -Bv Trade-offmentioning

confidence: 54%

New Power MOSFET with Beyond-1D-Limit RSP-BV Trade-Off and Superior Reverse Recovery Characteristics

Zhang

Wei

2020

Materials

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The application of conventional power metal-oxide-semiconductor field-effect transistor (MOSFET) is limited by the famous one-dimensional “silicon limit” (1D-limit) in the trade-off relationship between specific on-resistance (RSP) and breakdown voltage (BV). In this paper, a new power MOSFET architecture is proposed to achieve a beyond-1D-limit RSP-BV trade-off. Numerical TCAD (technology computer-aided design) simulations were carried out to comparatively study the proposed MOSFET, the conventional power MOSFET, and the superjunction MOSFET. All the devices were designed with the same breakdown voltage of ~550 V. The proposed MOSFET features a deep trench between neighboring p-bodies and multiple p-islands located at the sidewall and bottom of the trench. The proposed MOSFET allows a high doping concentration in the drift region, which significantly reduces its RSP compared to the conventional power MOSFET. The multiple p-islands split the electric field into multiple peaks and help the proposed MOSFET maintain a similar breakdown voltage to the conventional power MOSFET with the same drift region thickness. Another famous device technology, the superjunction MOSFET (SJ-MOSFET), also breaks the 1D-limit. However, the SJ-MOSFET suffers a snappy reverse recovery performance, which is a notorious drawback of SJ-MOSFET and limits the range of its application. On the contrary, the proposed MOSFET presents a superior reverse recovery performance and can be used in various power switching applications where hard commutation is required.

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Section: Device Structure and R Sp -Bv Trade-offmentioning

confidence: 54%

New Power MOSFET with Beyond-1D-Limit RSP-BV Trade-Off and Superior Reverse Recovery Characteristics

Zhang

Wei

2020

Materials

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“…According to Figure 14, the maximum breakdown voltage is obtained at a distance of 60 microns from the active area, and the diagram remains constant for more distances. In addition, as we expected, when the distance of the guard ring increases, the effect of the guard ring on reducing the field strength at the edges disappears [15]. Therefore, the distance of the first guard ring from the active area is selected as equal to 60 microns.…”

Section: Simulation Resultsmentioning

confidence: 98%

A novel design of a silicon PIN diode for increasing the breakdown voltage

Rezaei

Nayeri

Rezaeian

2022

IET Circuits, Devices & Syst

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This paper presents a new structure consisting of a silicon PIN junction with high breakdown voltage and low dark current with two Guard rings. To achieve the optimal structure, the effect of the parameters on the breakdown voltage and the dark current of the device has been investigated and simulated. The intrinsic thickness and impurity, the penetration depth of the active area and guard rings, location and number of guard rings, thickness, and distance between guard rings are the effective parameters of the device's breakdown voltage and dark current. In the proposed structure by placing two guard rings around the active area, the results show that an electric field is distributed at the edge of the active area between the guard rings, which leads to an increase of 292.62 V in breakdown voltage compared to the device without a guard ring.

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“…When d is 2.0 μm, the mean value of V B reached a maximum. This optimal d should correspond to the optimal spacing of the outermost ring in the case of multiple FFRs [23].…”

Section: Device Simulationmentioning

confidence: 99%

A Commercial-Simulator-Based Numerical-Analysis Methodology for 4H-SiC Power Devices Formed on Misoriented (0001) Substrates

Mochizuki

Okino

Matsushima

et al. 2015

IEEE J. Electron Devices Soc.

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A commercial-simulator-based numerical-analysis methodology for 4H-SiC power devices formed on misoriented (0001) substrates is proposed and applied for analyzing avalanche breakdown of floating-field-ring-terminated p-n diodes. Due to the inexpedience of a fixed orientation of the (0001) surface in current commercial device simulators, 4H-SiC (0001) surface is etched to form a miscut to separate the known effects of asymmetric nature of impact ionization and asymmetric aluminum concentration contours. 2-D process simulation of etching a 4H-SiC (0001) surface to expose a sloped surface, patterning the sloped surface with a mask, vertically implanting aluminum ions into the masked surface, removing the mask, and forming electrodes and a SiO 2 passivation film was carried out. This process simulation revealed asymmetric lateral straggling of implanted aluminum acceptors. The subsequent device simulation, which assumed fixed charge at the SiO 2 /4H-SiC interface, revealed asymmetric avalanche breakdown voltage in the misoriented direction and the opposite direction. This asymmetric breakdown qualitatively explains the previously reported nonuniform luminescence at breakdown. The proposed methodology is considered to be applicable to other power devices with other termination structures formed on misoriented 4H-SiC (0001) substrates.

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A general design methodology for the optimal multiple-field-limiting-ring structure using device simulator

Cited by 23 publications

References 16 publications

New Power MOSFET with Beyond-1D-Limit RSP-BV Trade-Off and Superior Reverse Recovery Characteristics

New Power MOSFET with Beyond-1D-Limit RSP-BV Trade-Off and Superior Reverse Recovery Characteristics

A novel design of a silicon PIN diode for increasing the breakdown voltage

A Commercial-Simulator-Based Numerical-Analysis Methodology for 4H-SiC Power Devices Formed on Misoriented (0001) Substrates

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