CsPbX 3 single crystals for constructing high-performance integrated electronic and optoelectronic systems. [15][16][17] However, because of lattice mismatch and random nucleation, [18,19] it is difficult to grow arrays of CsPbX 3 microcrystals in the vapor phase with uniform morphology as well as controlled location and size. For example, lattice mismatch results in diverse crystal morphologies and large densities of crystalline defects, including stacking faults, screw dislocations, and crystal boundaries. [20,21] Random nucleation is a disadvantage in the precise control of crystal locations for device integration. [22,23] Hence, the controllable growth of highquality perovskite single crystals for a device is highly challenging. This significantly hinders the controllable production of high-performance perovskite singlecrystal devices in arrays for integrated electronic and optoelectronic systems. Herein, we report an effective strategy to control the vaporphase growth of high-quality cesium lead bromide perovskite (CsPbBr 3 ) microplate arrays with uniform morphology as well as controllable location and size. By introducing CsPbBr 3 seeds on substrates, intractable lattice mismatches and random nucleation barriers are surpassed, and the epitaxial growth of CsPbBr 3 crystals is accurately controlled. In contrast to conventional vapor-phase growth methods, the as-prepared CsPbBr 3 single crystals can be selectively grown with uniform morphology as well as controlled location and size. Optical and electronic characterizations demonstrate that the CsPbBr 3 microplates exhibit a lower trap density and an enhancement in carrier lifetime exceeding 300% compared with those of conventional methods. The CsPbBr 3 microplate arrays were monolithically grown on silicon, demonstrating excellent lasing performance with the highest quality factor (Q factor) of ≈6806 and the narrowest full-width at half-maximum (FWHM) of ≈0.08 nm, which is the best laser performance among the reported perovskite singlecrystal arrays. Furthermore, the CsPbBr 3 microplate array was directly grown on a quartz glass for the scalable fabrication of high-performance photodetectors. This strategy allows the growth of high-quality CsPbBr 3 microplates with controllable size and location, thereby providing new opportunities for the construction of high-performance optoelectronic devices.To selectively grow CsPbBr 3 microplate arrays in the vapor phase, we first fabricated CsPbBr 3 seeds on silicon using our Inorganic perovskite single crystals have emerged as promising vapor-phase processable structures for optoelectronic devices. However, because of material lattice mismatch and uncontrolled nucleation, vapor-phase methods have been restricted to random distribution of single crystals that are difficult to perform for integrated device arrays. Herein, an effective strategy to control the vapor-phase growth of high-quality cesium lead bromide perovskite (CsPbBr 3 ) microplate arrays with uniform morphology as well as controlled location and size is r...