Controllable Growth of High‐Quality Inorganic Perovskite Microplate Arrays for Functional Optoelectronics

Abstract

CsPbX 3 single crystals for constructing high-performance integrated electronic and optoelectronic systems. [15][16][17] However, because of lattice mismatch and random nucleation, [18,19] it is difficult to grow arrays of CsPbX 3 microcrystals in the vapor phase with uniform morphology as well as controlled location and size. For example, lattice mismatch results in diverse crystal morphologies and large densities of crystalline defects, including stacking faults, screw dislocations, and crystal boundaries. [20,21] Random nucleation is a disadvantage in the precise control of crystal locations for device integration. [22,23] Hence, the controllable growth of highquality perovskite single crystals for a device is highly challenging. This significantly hinders the controllable production of high-performance perovskite singlecrystal devices in arrays for integrated electronic and optoelectronic systems. Herein, we report an effective strategy to control the vaporphase growth of high-quality cesium lead bromide perovskite (CsPbBr 3 ) microplate arrays with uniform morphology as well as controllable location and size. By introducing CsPbBr 3 seeds on substrates, intractable lattice mismatches and random nucleation barriers are surpassed, and the epitaxial growth of CsPbBr 3 crystals is accurately controlled. In contrast to conventional vapor-phase growth methods, the as-prepared CsPbBr 3 single crystals can be selectively grown with uniform morphology as well as controlled location and size. Optical and electronic characterizations demonstrate that the CsPbBr 3 microplates exhibit a lower trap density and an enhancement in carrier lifetime exceeding 300% compared with those of conventional methods. The CsPbBr 3 microplate arrays were monolithically grown on silicon, demonstrating excellent lasing performance with the highest quality factor (Q factor) of ≈6806 and the narrowest full-width at half-maximum (FWHM) of ≈0.08 nm, which is the best laser performance among the reported perovskite singlecrystal arrays. Furthermore, the CsPbBr 3 microplate array was directly grown on a quartz glass for the scalable fabrication of high-performance photodetectors. This strategy allows the growth of high-quality CsPbBr 3 microplates with controllable size and location, thereby providing new opportunities for the construction of high-performance optoelectronic devices.To selectively grow CsPbBr 3 microplate arrays in the vapor phase, we first fabricated CsPbBr 3 seeds on silicon using our Inorganic perovskite single crystals have emerged as promising vapor-phase processable structures for optoelectronic devices. However, because of material lattice mismatch and uncontrolled nucleation, vapor-phase methods have been restricted to random distribution of single crystals that are difficult to perform for integrated device arrays. Herein, an effective strategy to control the vapor-phase growth of high-quality cesium lead bromide perovskite (CsPbBr 3 ) microplate arrays with uniform morphology as well as controlled location and size is r...

Wettability‐Guided Screen Printing of Perovskite Microlaser Arrays for Current‐Driven Displays

“…into periodically patterned individual laser pixels is highly needed for the creation of active display panels. Various patterning methods have been proposed for the fabrication of perovskite arrays, such as substrate‐assisted vapor growth, [ 21–23 ] template‐confined liquid self‐assembly, [ 24–28 ] ink‐jet printing, [ 29 ] and others. [ 30,31 ] However, all these methods still suffer from the incompatibility with electroluminescent devices, which restricts their practical application in active display fields.…”

Wafer‐scale vertical van der Waals heterostructures

“…118,119 Aiming to manufacture high quality vdWHs with ordered structure, it is of great significance to control the nucleation and growth process, which can be realized through a seeded growth method. 120,121 The extremely clean and dangling-bond-free surface of 2D TMDs semiconductors contribute to the reduction of nucleation density. 8,122,123 Given that the large-size, low-defect underlying 2D materials can be synthesized through suppressing nucleation, [124][125][126] increasing precursor supply, 127,128 seamless stitching, 129,130 substrate engineering, 39,41 and phase engineering, 131 when defects are introduced artificially, the damaged areas with high energy and chemical disorder became the preferred nucleation sites, and then the nucleation and growth process of upper 2D materials will be controlled, leading to well-designed vdWHs with large scale.…”

Metal Halide Perovskites Functionalized by Patterning Technologies

“…To circumvent this issue, Gu and co‐workers modified the crystal growth process after patterning crystal seed arrays by inkjet printing. [ 71,72 ] The first scheme was to cover the crystal seed arrays onto the saturated perovskite precursor solution followed by the drying process at room temperature, resulting in creating millimeter‐sized perovskite single plates on various substrates including 2D materials like graphene and MoS 2 . [ 71 ] Another strategy was to introduce a perovskite vapor atmosphere via CVD to control the epitaxial growth of CsPbBr 3 single crystals with high crystallinity and accurate sizes.…”

“…[ 71 ] Another strategy was to introduce a perovskite vapor atmosphere via CVD to control the epitaxial growth of CsPbBr 3 single crystals with high crystallinity and accurate sizes. [ 72 ] As is known to all, perovskite crystals suffer from stability issues because of their ionic nature. In this regard, perovskite single‐crystal arrays were in situ crystallized in PDMS films by printing perovskite inks into liquid PDMS precursor.…”

“…achieved controllable growth of CsPbBr 3 microplate arrays in the perovskite vapor atmosphere. [ 72 ] By depositing two Au electrodes on each perovskite microplate, the photodetector arrays featured a high photo responsibility of 480 A W −1 detected at 2 V, as presented in Figure 7d,e. Wu et al.…”