A generalized Landauer-Datta-Lundstrom electron transport model

Limits for the graphene on ferroelectric domain wall p-n-junction rectifier for different regimes of current

“…The ratio As one can see from Figure 3, small values of The situation corresponds to the current regime transient from diffusive to ballistic one; mention, that the distance between the parallel FDW is generally much longer, in [7] it was of 5µm order, which enables to fabricate a micron-length channel with contacts near one FDW only. However, for ferroelectrics with extremely high permittivity, such as relaxors or PbZr x Ti 1-x O 3 with composition x near the morphotropic phase boundary x=0.52, The results presented in Figure 3 were calculated at room temperature.…”

“…Quasi-static electric field is defined via electric potential as In a paraelectric phase . Note, that temperature dependence of spontaneous polarization affects the concentration of electrons in graphene channel [9], which, in its turn, influences on the Fermi energy and the electron mean free path [6,7]. From the expressions (18) the coefficient β and mean path λ becomes polarization dependent and so temperature dependent, namely:…”

“…As it was demonstrated theoretically in [3], the transmission of electron through pnJ potential barrier at an angle normal to the barrier occurs with probability 1. Physically this can be explained by electron wave function structure in graphene: the incoming and the reflected electron states have opposite chirality, which makes the probability of reflection equal to zero [6,7]. This phenomenon is usually treated as the evidence of relativistic…”

Influence of Domain Structure in Ferroelectric Substrate on Graphene Conductance (Authors' Review)

“…Note that the unique properties of the -junction in graphene have been realized much earlier by the multiple-gate doping of a graphene channel by electrons and/or holes [19][20][21]. Later, they have been studied both theoretically [22,23] and experimentally [24][25][26]. Hinnefeld et al [11] and Baeumer et al [12], using ferroelectric substrates, created ajunction in graphene by imposing a graphene sheet on a 180…”

Determination of the maximum cooling capacities of two-stage coolers with a variation in the geometry of branches in stages

“…-creation of new materials with increased thermoelectric efficiency [8,9]; -use of thin-film technologies for manufacturing thermoelement materials [10][11][12]; -transition to nanostructural technologies for manufacturing thermoelement materials [13][14][15]; -attraction of external electromagnetic fields for control of charge transfer in the thermoelement material [16]; -optimization of heat transfer in a thermoelectric device [17,18]; -involving elements of reliability theory in the technology of manufacturing of thermoelectric coolers [19][20][21].…”