2020
DOI: 10.1007/s10825-020-01492-8
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A genetic algorithm to optimize the performance of the tunneling field-effect transistor

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Cited by 5 publications
(3 citation statements)
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“…[1][2][3][4][5][6][7][8][9][10] After observation and experimental verification of negative capacitances (NC) in ferroelectric materials (Fe), subthreshold swing based research and development has been taken seriously by semiconductor research community. [10][11][12][13][14][15] The ferroelectric materials based research&development, [11][12][13][14][15][16] provides a big domainto overcome the classical limitations [17][18][19][20][21][22] of conventional CMOS technology for low power. The non-identical polarization entire-near conventional dielectric, help to boost up the electricbeyond the end of the silicon roadmap.…”
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confidence: 99%
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“…[1][2][3][4][5][6][7][8][9][10] After observation and experimental verification of negative capacitances (NC) in ferroelectric materials (Fe), subthreshold swing based research and development has been taken seriously by semiconductor research community. [10][11][12][13][14][15] The ferroelectric materials based research&development, [11][12][13][14][15][16] provides a big domainto overcome the classical limitations [17][18][19][20][21][22] of conventional CMOS technology for low power. The non-identical polarization entire-near conventional dielectric, help to boost up the electricbeyond the end of the silicon roadmap.…”
mentioning
confidence: 99%
“…In case of tunnel FET based circuit and system design technology, maximum I ON , possible low SS and ambipolar current (I amb ) are required. [19][20][21] For a design engineer, the optimization of desirable device figure of merits(FoMs)likewise on-current (I ON ), off-sate response (I OFF ), subthreshold swing (SS) for low power is most critical task at device level. In addition of classical challenges and limitations of conventional CMOS low power design parameters, in case of tunnel FET technology, ambipolar current is additionaldemerits has been found.…”
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confidence: 99%
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