A Geometry Scalable Approach to InP HBT Compact Modeling for mm-Wave Applications

Nardmann, Tobias; Sakalas, P.; Chen, Fanglin; Rosenbaum, Tommy; Schröter, M.

doi:10.1109/csics.2013.6659200

Cited by 13 publications

(5 citation statements)

References 9 publications

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“…7b serves the same purpose though, since the extension of the contacts to the edge of the base mesa prevents any current flow around the emitter window. The results of this structure, which is in fact the most simple implementation of a tetrode, were first reported for InP HBTs in [27].…”

Section: Special Test Structuresmentioning

confidence: 78%

“…For each process, several devices were measured which differed in emitter mesa width (b E0 ), length (l E0 ) and area [27] and a HICUM/L0 model was created based on singletransistor extraction methods [39]. For the two other technologies, only HICUM/L0 model parameters could be determined since only single-transistor structures were available.…”

Section: Investigated Process Technologiesmentioning

confidence: 99%

“…This still leaves the question open how accurate either of the methods actually is. Therefore, in order to be able to evaluate the absolute (achievable) accuracy, in this study the extraction methods under investigation will be applied to simulation data generated by the physics-based compact model HICUM [26], which has been shown to accurately model InP DHBTs [27]. The advantages of this approach are:…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Determining the base resistance of InP HBTs: An evaluation of methods and structures

Nardmann

Krause

Pawlak

et al. 2016

Solid-State Electronics

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Section: Special Test Structuresmentioning

confidence: 78%

Section: Investigated Process Technologiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Determining the base resistance of InP HBTs: An evaluation of methods and structures

Nardmann

Krause

Pawlak

et al. 2016

Solid-State Electronics

View full text Add to dashboard Cite

“…HICUM/L2 is now available in all commercial simulators and is at present implemented in Verilog-A. Although it was originally developed with SiGe BiCMOS technology scaling in mind, model parameters can be extracted for any HBT technology, for example for any of the contending InP HBT technology nodes [36,118]. The methodology of parameter extraction is also detailed in the HICUM/L2 manual [113].…”

Section: Modeling For Re-engineered Terahertz Researchmentioning

confidence: 99%

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors

Božanić

Sinha

2019

Sensors

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This paper reviews the state of emerging transistor technologies capable of terahertz amplification, as well as the state of transistor modeling as required in terahertz electronic circuit research. Commercial terahertz radar sensors of today are being built using bulky and expensive technologies such as Schottky diode detectors and lasers, as well as using some emerging detection methods. Meanwhile, a considerable amount of research effort has recently been invested in process development and modeling of transistor technologies capable of amplifying in the terahertz band. Indium phosphide (InP) transistors have been able to reach maximum oscillation frequency (fmax) values of over 1 THz for around a decade already, while silicon-germanium bipolar complementary metal-oxide semiconductor (BiCMOS) compatible heterojunction bipolar transistors have only recently crossed the fmax = 0.7 THz mark. While it seems that the InP technology could be the ultimate terahertz technology, according to the fmax and related metrics, the BiCMOS technology has the added advantage of lower cost and supporting a wider set of integrated component types. BiCMOS can thus be seen as an enabling factor for re-engineering of complete terahertz radar systems, for the first time fabricated as miniaturized monolithic integrated circuits. Rapid commercial deployment of monolithic terahertz radar chips, furthermore, depends on the accuracy of transistor modeling at these frequencies. Considerations such as fabrication and modeling of passives and antennas, as well as packaging of complete systems, are closely related to the two main contributions of this paper and are also reviewed here. Finally, this paper probes active terahertz circuits that have already been reported and that have the potential to be deployed in a re-engineered terahertz radar sensor system and attempts to predict future directions in re-engineering of monolithic radar sensors.

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“…Once the scalable normalization rules are obtained, the model parameters of different size devices under the same process condition can be determined. Based on the physical scaling rules of single-cell HBT device, the power performance of multifinger unit cells can be evaluated [7]- [13] and provide feedback for process control data. SiGe HBTs are the first practical bandgap-engineered silicon devices, and the small signal model is complicated due to the influence of the lossy Si well substrate region beneath the collector-bulk junction [14], [15].…”

Section: Introductionmentioning

confidence: 99%

Emitter-Length Scalable Small Signal and Noise Modeling for InP Heterojunction Bipolar Transistors

Zhang

Gao

2019

IEEE Access

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In this paper, an emitter-length scalable noise and small signal model for InP heterojunction bipolar transistor (HBT) are presented. A set of scalable expressions for noise parameters based on hybrid-π topology in the low-frequency ranges are derived. The analytical and experimental results show that under the same bias condition, good emitter-length scaling of the noise and small signal model parameters can be achieved between 1.6µm ×10 µm, 1.6µm × 20 µm and 1.6µm × 30 µm InP HBTs.

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A Geometry Scalable Approach to InP HBT Compact Modeling for mm-Wave Applications

Cited by 13 publications

References 9 publications

Determining the base resistance of InP HBTs: An evaluation of methods and structures

Determining the base resistance of InP HBTs: An evaluation of methods and structures

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors

Emitter-Length Scalable Small Signal and Noise Modeling for InP Heterojunction Bipolar Transistors

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