A graphene field effect transistor for high temperature sensing applications

Abstract

As power density keeps increasing tremendously in emerging VLSI nanotechnology, the sensing and monitoring of die temperature is vital, implying the need for high performance materials compatible with current CMOS technology. Graphene is a promising material for sensor applications due to its planar geometry and high electrical and thermal conductivity. In this work, we have explored the feasibility of a thin oxide graphene field effect transistor (G-FET) as a temperature sensor. The resistivity of the device has been calculated using the semi-classical transport equations considering the scattering mechanisms by substrate polar phonons and intrinsic phonons. The generated self-heating in graphene-silicon dioxide interface, silicon dioxide layer and back-gated silicon wafer has been also considered to extract the saturation velocity of graphene at high electric field and high temperature. We have found that the resistivity of G-FET is highly sensitive to high ambient temperature variation. The calculated temperature coefficient of resistance (TCR) of G-FET at high temperatures (~600 o C) is three times higher than room temperature exhibiting the highly sensitive resistance to high temperature variation. The resistance shows third order dependence on the ambient temperature in the range of 0 to 600 o C and the TCR at high temperatures has been demonstrated a high dependence on the drain-source voltage ranging from to for the voltage spanning from 5V to 1V while that of low temperature is relatively unalterable.

Investigation of the width-dependent static characteristics of graphene nanoribbon field effect transistors using non-parabolic quantum-based model

“…The accurate results and deeper physical insight can be achieved by atomistic quantum transport models at the expense of long computational times. Yet, a considerable computational advantage and relatively accurate results can be achieved by solving the self-consistent non-equilibrium Green's Function (NEGF) formulism in mode space basis as has been already demonstrated for conventional MOS FETs [28,29], carbon nanotube FETs [9,30] and GNR FETs [31,32]. In addition, the application of non-parabolic effective mass (NPEM) correction [33] and the proper selection of contributing subbands in self-consistent loop can lead to a considerable decrease in simulation time.…”

“…The discovery of novel carbon-based materials such as carbon nanotube [4] and graphene [5] has already introduced merit materials for next-generation electronics. Graphene is one atomic layer of carbon sheet in a honeycomb lattice, which can outperform state-of-the-art silicon in many applications [6,7] due to its exceptional properties such as large carrier motility, high carrier concentration, high thermal conductivity and atomically thin planar structure [8,9]. However, large-area graphene is a semimetal with zero bandgap, which cannot be fully switched off and consequently not a proper material for digital applications [10].…”

Scaling Effects on Static Metrics and Switching Attributes of Graphene Nanoribbon FET for Emerging Technology

“…Recently graphene has evolved as a next generation material for emerging technologies due to its exceptional properties such as atomically thin planar structure, high carrier concentration, high carrier mobilities and thermal conductivity [5,6]. Unlike the carbon nanotube (CNT), planar structure of graphene is compatible with the current CMOS technology and it can be patterned both as a channel and interconnect in all-graphene circuits [7].…”

Metallic single-walled, carbon nanotube temperature sensor with self heating

“…Recently, due to high electro-thermal properties of carbon nanotube and graphene, research has advanced further to explore potential of temperature sensors designed with these nano-materials [2][3][4][5][6] . Beside high electro-thermal conductivities, nanometer feature size made these materials the perfect candidates to embed into shrinking devices.…”