Metallic single-walled, carbon nanotube temperature sensor with self heating

Mohsin, K. M.; Banadaki, Yaser M.; Srivastava, Ashok

doi:10.1117/12.2044603

Cited by 7 publications

(4 citation statements)

References 18 publications

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“…Increasing ambient temperature and generated self-heating results in further increase in carrier densities at higher gate bias because of thermally generated carriers in graphene. The total thermal resistance of graphene-SiO 2 boundary, SiO 2 layer and back-gated silicon wafer has been solved self-consistently with heat dissipation in graphene to obtain the average device temperature for an ambient temperature 19 . Increasing gate and drain voltage increases the Joule heating and the corresponding temperature on G-FET as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

A graphene field effect transistor for high temperature sensing applications

2014

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As power density keeps increasing tremendously in emerging VLSI nanotechnology, the sensing and monitoring of die temperature is vital, implying the need for high performance materials compatible with current CMOS technology. Graphene is a promising material for sensor applications due to its planar geometry and high electrical and thermal conductivity. In this work, we have explored the feasibility of a thin oxide graphene field effect transistor (G-FET) as a temperature sensor. The resistivity of the device has been calculated using the semi-classical transport equations considering the scattering mechanisms by substrate polar phonons and intrinsic phonons. The generated self-heating in graphene-silicon dioxide interface, silicon dioxide layer and back-gated silicon wafer has been also considered to extract the saturation velocity of graphene at high electric field and high temperature. We have found that the resistivity of G-FET is highly sensitive to high ambient temperature variation. The calculated temperature coefficient of resistance (TCR) of G-FET at high temperatures (~600 o C) is three times higher than room temperature exhibiting the highly sensitive resistance to high temperature variation. The resistance shows third order dependence on the ambient temperature in the range of 0 to 600 o C and the TCR at high temperatures has been demonstrated a high dependence on the drain-source voltage ranging from to for the voltage spanning from 5V to 1V while that of low temperature is relatively unalterable.

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Section: Resultsmentioning

confidence: 99%

A graphene field effect transistor for high temperature sensing applications

2014

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“…Quantum capacitance can be obtained from following equation (7). Electrostatic capacitance is dominant over quantum capacitance only for few numbers of shells.…”

Section: Equivalent Inductance (L Eqv ) and Capacitance (C Eqv )mentioning

confidence: 99%

“…Due to high electro-thermal conductivities of different variants of carbon nanotube (CNT) and graphene, research has advanced further to explore potential of these nano-materials as future VLSI interconnect [1][2][3][4][5][6] and sensors [7,8]. Because of high thermal conductivity, CNT interconnects can quickly drain out heat energy to make interconnect more thermally stable [4,9].…”

Section: Introductionmentioning

confidence: 99%

Characterization of SWCNT Bundle Based VLSI Interconnect with Self-heating Induced Scatterings

Mohsin

Srivastava

2015

Proceedings of the 25th Edition on Great Lakes Symposium on VLSI

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Performance of single walled carbon nanotube (SWCNT) bundle-based VLSI interconnects has been studied under the strong influence of scatterings induced by self-heating. Landauer Büttiker formalism along with Fourier heat transfer equation have been used to compute interconnect scattering parameters at various cross sectional areas of the interconnection. Cross sectional temperature calculation was performed using finite difference method considering temperature dependent thermal conductivity for primitive defect-less SWCNT bundles. Using the relaxation time approximation, we have studied scattering dynamics in calculating equivalent resistance. Electronic and thermal transport equations have been coupled and solved iteratively to get accurate estimation of temperatures and resistances. Study of scattering parameters shows low backscattering however significant transmission loss. Below 100GHz, for a 1µm long interconnect with 10 nm by10 nm cross sectional area shows S 21 as high as 80dB. In terahertz regime transmission parameter S 21 is in the range of few hundreds dB.

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“…Carbon has been widely tipped as a promising element for next-generation electronics due to its impressive allotropes [3][4][5][6]. Among carbon allotropes, carbon nanotube (CNT) [7,8] and graphene [9][10][11] are prominent contenders for high-performance sensors. CNT has limited number of atoms in its circumference, thus removal of one atom can significantly change the carrier transport.…”

Section: Introduction mentioning

confidence: 99%

Carbon Nanotube Ring Oscillator for Detecting Ionized Radiation

Banadaki¹,

Sharifi²,

Craig³

et al. 2016

JMSE-A

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In this paper, we have explored the feasibility of a carbon nanotube (CNT) ring oscillator (RO) for detecting ionized radiation. The effect of ion irradiation on the oscillation frequency of CNT-based RO is considered using the displacement damage dose (DDD) methodology. The analytical model of the irradiated resistance of metallic single-walled CNT (SWCNT) has been developed and verified by experimental data for increasing DDD from 10 12 to 10 17 MeV/g. We have found that 100 times increase in the DDD from 10 15 to 10 17 MeV/g results in nearly 20 times increase in propagation delay of an input signal passing through 500 nm metallic SWCNT, which can be easily read. It is also found that an order of magnitude increase in the length of SWCNT results in approximately an order of magnitude decrease in the minimum range of detectable DDD considering the oscillation frequency of CNT RO as the output of the proposed radiation detector. As carbon nanotube with the record length of 50 cm has been reported, it is very promising for detecting much lower radiation.

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Metallic single-walled, carbon nanotube temperature sensor with self heating

Cited by 7 publications

References 18 publications

A graphene field effect transistor for high temperature sensing applications

A graphene field effect transistor for high temperature sensing applications

Characterization of SWCNT Bundle Based VLSI Interconnect with Self-heating Induced Scatterings

Carbon Nanotube Ring Oscillator for Detecting Ionized Radiation

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