A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs

Djerioui, M.; Hebali, Mourad; Chalabi, D.; Saïdane, A.

doi:10.21272/jnep.10(4).04027

Cited by 1 publication

(2 citation statements)

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“…As a first step, the Poisson equation and associated boundary conditions lead to a transcendental equation that will allow to find the electrostatic potential at the center of the silicon film. Knowing this electrostatic potential, it is easy to calculate the potentials on the surface and in the volume and obtain the electrical charge carrier density in the channel [8]. Our model uses only the drift current component, which is broadly acceptable as the diffusion component, first proposed by Pao and Sah, is only a few percent of the total drain current [9].…”

Section: Output and Transfer Characteristicsmentioning

confidence: 99%

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Impact of Device Sizing on Electrical Properties of DG-SOI-MOSFET Using Octave Software

Djerioui¹,

Hebali²,

Abid³

2022

J. Nano- Electron. Phys.

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Double-gate (DG) SOI-MOSFET device is regarded as the next generation of VLSI circuits. In this paper, we show the impact of miniaturization on the demand and challenges of the undoped-body symmetric DG-SOI-MOSFET planar design for low power and high performance. By exploiting the graphical approach used previously, which consists of numerical simulations valid for all bias conditions, from subthreshold to strong inversion and from linear to saturation operation, we visualized the evolution of the transfer, output and electrical characteristics and output conductance by varying each of the parameters independently: oxide thickness (tox), channel length (L) and channel width (W). The results obtained allowed to verify how each dimension affects different electrical properties of the DG-SOI-MOSFET. It was found that L, W and tox significantly influence these properties, as well as this transistor includes the channel length-modulation (CLM) and drain induced barrier lowering (DIBL) effects. This study showed the ability to predict the electrical behavior of the DG-SOI-MOSFET by its geometrical dimensions, and the possibility of choosing the optimal dimensions to ensure high performance of this transistor in both analog and digital circuits.

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Section: Output and Transfer Characteristicsmentioning

confidence: 99%

“…In this article, we want to continue to validate the model developed previously [8], which will be applied to nanoscale symmetric DG-SOI-MOSFETs. The output and transfer characteristics and output conductance will be determined for various gate polarizations, channel lengths, oxide thicknesses and silicon film thicknesses.…”

Section: Introductionmentioning

confidence: 99%