A green and facile hydrothermal approach for the synthesis of high-quality semi-conducting Sb2S3 thin films

Li, Meng; Gong, Yongshuai; Li, Zhilin; Dou, Meiling; Wang, Feng

doi:10.1016/j.apsusc.2016.06.126

Cited by 48 publications

(27 citation statements)

References 35 publications

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“…The Sb 2 S 3 thin films were deposited onto single or double buffer layer coated ITO glass substrates (ITO/CdS or ITO/TiO 2 /CdS) by hydro‐thermal method . In detail, we used potassium antimony tartrate (C 8 H 4 K 2 O 12 Sb 2 · 3H 2 O, 99.5%, Macklin) and sodium thiosulfate pentahydrate (H 10 Na 2 O 8 S 2 ) as Sb and S source, respectively.…”

Section: Methodsmentioning

confidence: 99%

Promising Sb₂(S,Se)₃ Solar Cells with High Open Voltage by Application of a TiO₂/CdS Double Buffer Layer

Wang¹,

Wang²,

Chen³

et al. 2018

Solar RRL

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Sb 2 (S,Se) 3 has gathered a lot of attention recently as a promising alternative absorber material. However, the efficiencies of Sb 2 (S,Se) 3 devices are seriously restricted by the low open circuit voltage (V oc ). In this work, Sb 2 (S, Se) 3 devices equipped with a TiO 2 /CdS double buffer layer are prepared by a hydro-thermal method, which aims to overcome the V oc deficit. The obtained average V oc of the devices is 785 mV and the champion efficiency of 5.73% is also achieved with a highest V oc ¼ 792 mV, Jsc ¼ 12.03 mA cm À2 , FF ¼ 60.9%. The improvement of V oc is benefited from the reduced band gap offset after application of the double buffer layer. The non-encapsulated device could keep an average power conversion efficiency of 5.69% after being stored in ambient air over a month. This indicates the great potential of a double buffer layer in new chalcogenide photovoltaic devices.

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Section: Methodsmentioning

confidence: 99%

Promising Sb₂(S,Se)₃ Solar Cells with High Open Voltage by Application of a TiO₂/CdS Double Buffer Layer

Wang¹,

Wang²,

Chen³

et al. 2018

Solar RRL

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“…We start with the fabrication of Sb 2 (S,Se) 3 film by using antimony potassium tartrate (APT), sodium thiosulfate (Na 2 S 2 O 3 , STS), and selenourea (SU) as antimony, sulfur, and selenium sources in the hydrothermal reactive deposition system by the reported method with further modifications (see the "Experimental Section" for details). [16,17] We utilize CdS as an electron-transporting layer which was fabricated by chemical bath deposition (CBD) on the F-doped tin dioxide (FTO) coated glass. In the synthesis, the substrate, i.e., CdS-coated FTO glass, was placed into the autoclave tilted with CdS layer facing down (Figure 1a).…”

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confidence: 99%

Manipulating the Electrical Properties of Sb₂(S,Se)₃ Film for High‐Efficiency Solar Cell

Xiaomin

Tang

Jiang

et al. 2020

Advanced Energy Materials

176

142

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Material processing is critical for obtaining high-performance solar cells, which influences the morphological, crystal, and electrical properties of the functional materials in a device. Sb 2 (S,Se) 3 can be considered as a quasi-binary compound since sulfur and selenium can be alloyed with a continuous ratio due to the identical crystal structure of Sb 2 S 3 and Sb 2 Se 3 and close ionic radius between sulfur and selenium. [1-3] This simple chemical composition allows for facile synthesis of Sb 2 (S,Se) 3 film with a well-defined crystal structure. In this regard, both

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“…In chalcogenide semiconductors, Sb 2 S 3 is a promising semiconductor material with different phase structures (a crystal phase called antimony trisulfide or stibnite, an amorphous phase called metastibnite) depending on the process. Whereas the stibnite phase has a direct energy gap ranging from 1.7 to 1.8 eV, the amorphous phase has a direct energy gap ranging from 1.7 to 2.8 eV 6,7,8 . In the amorphous phase, it has a very high absorption coefficient (1.8 × 10 5 cm −1 ) 9 at a wavelength of 450 nm.…”

mentioning

confidence: 99%

Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap

Chen

Chiu

Luo

et al. 2020

Sci Rep

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Despite significant progress in the fabrication and application of semiconductor materials for optical emitters and sensors, few materials can cover the cyan-gap between 450 and 500 nm. We here introduce a robust and facile method to deposit amorphous Sb2S3 films with a bandgap of 2.8 eV. By exploiting the tunable functionality of graphene, a two-dimensional material, efficient deposition from a chemical was achieved. Ozone-generated defects in the graphene were shown to be required to enhance the morphology and quality of the material and comprehensive characterization of the seed layer and the Sb2S3 film were applied to design an optimal deposition process. The resulting material exhibits efficient carrier transport and high photodetector performance as evidenced by unprecedented responsivity and detectivity in semiconductor/graphene/glass vertical heterostructures. (112 A/W, 2.01 × 1012 Jones, respectively).

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A green and facile hydrothermal approach for the synthesis of high-quality semi-conducting Sb2S3 thin films

Cited by 48 publications

References 35 publications

Promising Sb₂(S,Se)₃ Solar Cells with High Open Voltage by Application of a TiO₂/CdS Double Buffer Layer

Promising Sb₂(S,Se)₃ Solar Cells with High Open Voltage by Application of a TiO₂/CdS Double Buffer Layer

Manipulating the Electrical Properties of Sb₂(S,Se)₃ Film for High‐Efficiency Solar Cell

Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap

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A green and facile hydrothermal approach for the synthesis of high-quality semi-conducting Sb2S3 thin films

Cited by 48 publications

References 35 publications

Promising Sb2(S,Se)3 Solar Cells with High Open Voltage by Application of a TiO2/CdS Double Buffer Layer

Promising Sb2(S,Se)3 Solar Cells with High Open Voltage by Application of a TiO2/CdS Double Buffer Layer

Manipulating the Electrical Properties of Sb2(S,Se)3 Film for High‐Efficiency Solar Cell

Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap

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Promising Sb₂(S,Se)₃ Solar Cells with High Open Voltage by Application of a TiO₂/CdS Double Buffer Layer

Promising Sb₂(S,Se)₃ Solar Cells with High Open Voltage by Application of a TiO₂/CdS Double Buffer Layer

Manipulating the Electrical Properties of Sb₂(S,Se)₃ Film for High‐Efficiency Solar Cell