2004
DOI: 10.1016/j.ssc.2004.02.054
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A Hall coefficient investigation of ferromagnetic Ga1−xMnxAs layers on (100) GaAs substrates

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Cited by 4 publications
(2 citation statements)
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“…So far various kinds of DMS systems were investigated to examine the possibility of practical spintronic applications [4,5]. The main advantage of DMS over ferromagnetic metal (FM) in a metallic spintronic device is the effective spin injection due to smaller lattice mismatch between a DMS and its semiconductor (SC) heterojunction partner and which is unlike the case of spin injection from a FM layer into SC.…”
Section: Introductionmentioning
confidence: 99%
“…So far various kinds of DMS systems were investigated to examine the possibility of practical spintronic applications [4,5]. The main advantage of DMS over ferromagnetic metal (FM) in a metallic spintronic device is the effective spin injection due to smaller lattice mismatch between a DMS and its semiconductor (SC) heterojunction partner and which is unlike the case of spin injection from a FM layer into SC.…”
Section: Introductionmentioning
confidence: 99%
“…The discovery of ferromagnetism in (In, Mn)As and (Ga, Mn)As prepared by MBE method promoted DMSs as fundamental materials for spintronics because of their compatibility with semiconductors used in present day electronics [5,6]. Likewise, ferromagnetism in (Zn,Cr)Te prepared by MBE technique has also stimulated the research due to the high solubility of Cr in II-VI group semiconductors [7]. In our recent study, we have investigated ferromagnetism and its origin in (Zn, Cr)Te thin films prepared by a simple thermal evaporator [8,9].…”
Section: Introductionmentioning
confidence: 99%