2019
DOI: 10.1016/j.nima.2019.06.022
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A HEMT-based cryogenic charge amplifier with sub-100 eVee ionization resolution for massive semiconductor dark matter detectors

Abstract: We present the design and noise performance of a fully cryogenic (T=4 K) HEMT-based charge amplifier for readout of massive semiconductor dark matter detectors operating at sub-Kelvin temperatures. The amplifier has been developed to allow direct detection experiments such as CDMS and EDELWEISS to probe WIMP masses below 10 GeV/c 2 while retaining electromagnetic background discrimination. The amplifier dissipates only 1 mW of power and has a measured noise performance three times better than traditional JFET-… Show more

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Cited by 19 publications
(12 citation statements)
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“…Proper design of the cold amplifier is required to ultimately be limited by only the input HEMT noise. Previous work by some of the authors [27] has demonstrated 91 eV ee baseline RMS ionization resolution with a HEMT-based cryogenic charge amplifier with a 240g CDMS-II cryogenic germanium detector, nearly matching the model predictions. However, the complexity required to implement a HEMT-based fully cryogenic charge amplifier for the hundreds of ionization channels present in a reasonably-sized experiment requires us to explore amplifier topologies where the use of cryogenic HEMTs is limited to only the input transistor.…”
Section: Detector + Hemt Noise Modelsupporting
confidence: 67%
See 1 more Smart Citation
“…Proper design of the cold amplifier is required to ultimately be limited by only the input HEMT noise. Previous work by some of the authors [27] has demonstrated 91 eV ee baseline RMS ionization resolution with a HEMT-based cryogenic charge amplifier with a 240g CDMS-II cryogenic germanium detector, nearly matching the model predictions. However, the complexity required to implement a HEMT-based fully cryogenic charge amplifier for the hundreds of ionization channels present in a reasonably-sized experiment requires us to explore amplifier topologies where the use of cryogenic HEMTs is limited to only the input transistor.…”
Section: Detector + Hemt Noise Modelsupporting
confidence: 67%
“…The current noise dominates the resolution for the 100 pF HEMT while is negligible for the 5 pF HEMT. Our model predicts an remarkable 19 eV ee rms ionization baseline resolution for the 5 pF HEMT which is one order of magnitude better than the best resolution achieved on ionisation with cryogenic detectors [1,27].…”
Section: Detector + Hemt Noise Modelmentioning
confidence: 73%
“…In principle, the readout time can be arbitrarily long by taking R b → ∞, but in practice the readout time is always limited by either pileup events or by rising noise at low frequency (often called 1/f noise), presumably caused by stochastic transitions in two-level systems. Recent work using High Electron-Mobility Transistors (HEMTs) by the SuperCDMS and EDELWEISS collaborations demonstrated a charge readout with a noise corner of around 4 kHz (τ ≈ 40 µsec) and a white noise floor of N v ∼ 0.2 nV/ √ Hz, resulting in a charge resolution of ∼ 35 electron-hole pairs for C det ≈ 150 pF and C in ≈ 100 pF [48]. These amplifiers can be produced with variable C in down to <10 pF, and it has been shown that the 1/f noise scales as C −1/2 in while the white noise is invariant to gate capacitance [49].…”
Section: Charge Resolutionmentioning
confidence: 99%
“…• Ge and Si: are semiconductor materials that can perform electronic/nuclear recoil discrimination down to the energy threshold providing the ionization baseline resolution is good enough [37].…”
Section: Signal and Background Modelingmentioning
confidence: 99%