A high-current, high speed electron beam lithography column

Kelly, John J.; Groves, Timothy R.; Kuo, Hui-Lung

doi:10.1116/1.571194

Cited by 23 publications

(4 citation statements)

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“…In this way, complex systems can be analyzed by Monte Carlo sim ulation of a series of drift lengths separated by thin lenses. Such simulations have shown close agreement with experiment [51,70]. Monte Carlo simulation thus offers a powerful predictive tool in the design of practical systems.…”

Section: Monte Carlo Simulationsupporting

confidence: 62%

Charged Particle Optics Theory

Groves¹

2017

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Cover picture: A monatomically thick graphene layer, viewed in a Nion UltraSTEM200 aberration-corrected scanning transmission electron microscope (STEM) located at the Oak Ridge National Laboratory. The microscope was operated at 60 KV in annular dark field (ADF) mode. The red regions represent individual carbon atoms with nearest-neighbor spacing of 0.14 nm. The red regions represent the highest scattered intensity, and the blue regions represent the lowest scattered intensity. The image is a sum of intensities of 350 separate areas of a single graphene specimen, each having 128×128 pixels. Each individual scan is translated so as to maximize the cross-correlation function between separate scans. This greatly reduces noise in the composite image. The original image and specimen were prepared by Dr. Florence Nelson, and the correlation analysis was performed by Jennifer Passage.

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Section: Monte Carlo Simulationsupporting

confidence: 62%

Charged Particle Optics Theory

Groves¹

2017

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“…As the electric field is increased so that an increasing amount of the current passes through the barrier there is a significant increase in the energy spread, as can be seen from Fig. 2 (Collier, 1979), by Hewlett-Packard Corporation (Kelly et al, 1981) and by E-Beam Corporation (Livesay, 1984). In this laboratory they have been applied in a scanning Auger microscope which was capable of focusing 110 nA of beam current into spot size of 100 nm at 12 keV beam energy and 125 mm working distance from the final lens (Tuggle et al, 1979).…”

Section: In Our Laboratory a Cfe Cathode Operated At P=7xmentioning

confidence: 94%

Thermal field emission for low voltage scanning electron microscopy

Orloff

1985

Journal of Microscopy

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SUMMARY Low voltage scanning electron microscopy is a technique of great importance to the semiconductor industry, where inspection and testing of non‐conductive devices must be done at ∼ 1 keV beam energy. In order to perform scanning electron microscopy for inspection at high speed, improved cathodes are required in order to achieve good resolution at low energy with high beam current, the chromatic spread in the electron beam is shown to be the limiting factor in the SEM and a comparison of thermionic, field emission and Schottky cathodes is made to determine which can provide the best performance. It is concluded that a thermal field emission or Schottky, cathode is superior to either conventional field emission or thermionic cathodes.

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“…Veneklasen (1972) has outlined the advantages of using, in the electrostatic pentode FEG he developed, a magnetic lens in place of its Einzel lens to decrease gun aberrations and thus to increase the beam current capability. Several attempts have been made to develop magnetic field superimposed FEG (Kuo, 1976;Troyon, 1980;Kelly et al, 1981;Speidel and Benner, 1985). We describe here a modified and improved version of our first prototype (Troyon, 1980).…”

Section: Zirconiated Tungsten Emittermentioning

confidence: 99%

Magnetic field emission gun with zirconiated emitter

Troyon¹

1989

J. Elec. Microsc. Tech.

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A magnetic-field-superimposed field emission gun with low aberrations and equipped with a zirconiated tungsten emitter has been developed for applications where very stable high probe currents are required. It has been tested on a conventional electron microscope at 10 kV and on an electron beam testing system at 1 kV. Probe current i = 250 nA in a probe size d = 0.4 micron is obtained at 10 kV; at 1 kV the resolution is 0.1 micron with i = 5 nA, and 0.4 micron with i = 30 nA. For these probe currents, the spatial broadening effect due to electron-electron interactions in the beam is the preponderant factor limiting the probe size.

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A high-current, high speed electron beam lithography column

Cited by 23 publications

References 0 publications

Charged Particle Optics Theory

Charged Particle Optics Theory

Thermal field emission for low voltage scanning electron microscopy

Magnetic field emission gun with zirconiated emitter

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