A High-Frequency Extension of a Surface-PotentialBased Substrate Model for Noise Coupling Analysis

Simic, N.; Ingvarson, F.; Kristiansson, Simon; Zgrda, M.; Jeppson, Kjell

doi:10.1109/icmel.2006.1650963

Cited by 2 publications

(3 citation statements)

References 6 publications

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“…where N t is the number of time intervals. We use a finite difference scheme to approximate the spatial derivatives in (8) and (9) [30,31]. The discretisation scheme shown in Fig.…”

Section: Analysis Of the Stochastic Telegrapher's Equationsmentioning

confidence: 99%

See 1 more Smart Citation

Time‐domain signal and noise analysis of millimetre‐wave/THz diodes by numerical solution of stochastic telegrapher's equations

Mokarram

Abdipour

Askarpour

et al. 2020

IET Microwaves, Antennas & Propagation

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The time‐domain simultaneous signal and noise analysis of mm‐wave/THz devices (diode) modelled as a transmission line is considered. For such devices, stochastic telegrapher's equations of a transmission line are extracted assuming a quasi‐transverse electromagnetic mode. Since the analytical solution for these equations does not exist, numerical analysis of such equations is presented here in millimetre‐wave and terahertz frequencies. These equations are analysed with two different numerical methods in the time domain, namely the finite‐integration technique and the Method of Moments. A semi‐distributed model in the ADS commercial software is used to validate the numerical results. Non‐linear effects in the model are introduced to simulate a Schottky diode. Using this non‐linear model signal and noise behaviour in a Schottky diode is analysed, resulting in the simulation of the noise figure of the device.

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“…where N t is the number of time intervals. We use a finite difference scheme to approximate the spatial derivatives in (8) and (9) [30,31]. The discretisation scheme shown in Fig.…”

Section: Analysis Of the Stochastic Telegrapher's Equationsmentioning

confidence: 99%

“…The effects of noise are more pronounced when the device works in the non-linear regime. This is because of the interdependency of the point of operation of the device and the noise and signal levels [9][10][11]. In such cases, more exact modelling of the devices is necessary.…”

Section: Introductionmentioning

confidence: 99%

Time‐domain signal and noise analysis of millimetre‐wave/THz diodes by numerical solution of stochastic telegrapher's equations

Mokarram

Abdipour

Askarpour

et al. 2020

IET Microwaves, Antennas & Propagation

View full text Add to dashboard Cite

show abstract

“…The advantages of this model is that the Z-parameters can be calculated from the substrate resistivity and we do not have to extract resistances and capacitances for a certain circuit topology. Furthermore, the frequency dependence of the silicon substrate can easily be taken care of as shown in [7]. As shown in Fig.…”

Section: Substrate Noise Suppression -Z-parameter Substrate Modelmentioning

confidence: 99%

Evaluation of using active circuitry for substrate noise suppression

Farivar

Kristiansson

Ingvarson

et al. 2007

Proceedings of the 17th ACM Great Lakes Symposium on VLSI

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The performance of system-on-chips can be severely degraded if noisy circuits interfere with sensitive circuits through the common silicon substrate. Many methods have been proposed to suppress such substrate noise, ranging from designing circuits that generate less noise to using guard bands to prevent noise from reaching the sensitive parts. In this paper we have investigated a proposed method for substrate noise suppression using active circuitry, and compared it with two passive methods; resistive grounding and capacitive decoupling. Published results indicate that active noise suppression outperforms passive noise suppression. However, these results are based on simulations using oversimplified substrate models, like single node or resistor T-models. In this paper we confirm these previous results, but we also show that when using a more realistic substrate model these advantages disappear! We claim that there is no noticeable difference between active noise suppression and DC grounding; these two methods are comparable and better than capacitive decoupling. The substrate resistivity in system-on-chip solutions typically result in large substrate resistances that decrease the efficiency of active decoupling compared to simple DC grounding.

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A High-Frequency Extension of a Surface-PotentialBased Substrate Model for Noise Coupling Analysis

Cited by 2 publications

References 6 publications

Time‐domain signal and noise analysis of millimetre‐wave/THz diodes by numerical solution of stochastic telegrapher's equations

Time‐domain signal and noise analysis of millimetre‐wave/THz diodes by numerical solution of stochastic telegrapher's equations

Evaluation of using active circuitry for substrate noise suppression

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