Time‐domain signal and noise analysis of millimetre‐wave/THz diodes by numerical solution of stochastic telegrapher's equations

Abstract

The time‐domain simultaneous signal and noise analysis of mm‐wave/THz devices (diode) modelled as a transmission line is considered. For such devices, stochastic telegrapher's equations of a transmission line are extracted assuming a quasi‐transverse electromagnetic mode. Since the analytical solution for these equations does not exist, numerical analysis of such equations is presented here in millimetre‐wave and terahertz frequencies. These equations are analysed with two different numerical methods in the time domain, namely the finite‐integration technique and the Method of Moments. A semi‐distributed model in the ADS commercial software is used to validate the numerical results. Non‐linear effects in the model are introduced to simulate a Schottky diode. Using this non‐linear model signal and noise behaviour in a Schottky diode is analysed, resulting in the simulation of the noise figure of the device.

Modulation Transfer between Microwave Beams: A Hypothesized Case of a Classically-Forbidden Stochastic Process

“…Originally, the telegrapher's equation was used to model the current and voltage in a portion of a transmission line with distance and time. Since then, modern physics has exploited it in numerous applications from signal analysis [6][7][8][9][10], to random walk [11][12][13][14] and wave propagation [15][16][17].…”

Trends of Microwave Devices Design Based on Artificial Neural Networks: A Review

“…The growing research in the field of microwave devices is also increasing the need to search for the new modeling techniques [20,21], which could be divided into the methods of synthesis [22,23] and analysis [24]. The conventional currently used methods are based on the usage of different forms of Maxwell's equations.…”

Time‐domain signal and noise modelling and analysis of millimetre‐wave and THz high electron mobility transistors

“…As a result, when the operating frequency increases, the wavelength becomes comparable with the largest dimension of devices and the wave propagation phenomena affect the electrical performance of such devices, especially in the non-linear regime [7,8]. Besides, high-frequency integrated circuits using both analog and digital circuits on the common substrate are more susceptible to noise.…”

“…To consider the noise properly, STEs should be utilised. Although the STEs have been used successfully in the frequency domain [19, 20], the time‐domain analysis of these equations was not presented previously until our recent work studying the STEs for a Schottky diode as a single TL [7].…”

“…But this approach is not valid when the frequency increases. One of its drawbacks is that the semi-distributed model cannot simulate the wave propagation and phase cancellation effects at higher frequencies [7]. Another model that is more accurate than the sliced model and decreases the computational costs is the full-distributed model.…”