A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model

Crippa, Paolo; Biagetti, Giorgio; Turchetti, Claudio; Falaschetti, Laura; Mencarelli, Davide; Deligeorgis, G.; Pierantoni, Luca

doi:10.3390/electronics10222835

Cited by 2 publications

(3 citation statements)

References 36 publications

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“…Crippa et al [7] analyzed high-gain 90 nm length and 1 μm width CNTFET-based broadband inductor-less low noise amplifier (LNA) and confirmed the overall validity of the proposed high-gain LNA design while comparing both conventional 32 nm CMOS technologies and CNTFET with the limitation of restricted to 90 nm technology. Akhoon et al [8] designed and simulated a current source load…”

Section: Literature Surveymentioning

confidence: 74%

Comparative Performance Study of Difference Differential Amplifier Using 7 nm and 14 nm FinFET Technologies and Carbon Nanotube FET

Kumar

Janakirani

Anand

et al. 2022

Journal of Nanomaterials

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Difference differential amplifiers (DDA), which were built on FinFET and carbon nanotube FET (CNTFET), are frequently used for signal processing owing to their advantages of low-power dissipation and reduced device dimension. In this work, high-performance DDA was established using CNTFET model parameters as well as FinFET 7 nm and 14 nm technology. The DDA circuit used in this scenario was identically the same to the one used previously. With the use of Verilog AMS code-based Stanford model parameters applied CNTFET and 7 nm and 14 nm FinFETs, schematic capture and simulations of the DDA were carried out in the Symica environment. The mostly used measurements for assessing the performance of operational amplifiers were also adopted for DDA. The CNTFET-based difference differential amplifiers have slew rates of 10.8 V/femtosecond and 11.2 mV/femtosecond, respectively, with settling times of 0.65 femtosecond and 0.43 femtosecond, respectively. The power supply rejection ratio (PSRR) is 2.53 dB with a dynamic range of 198 mV and 6 mV for CNTFET DDA operating at 0.6 V DC. The incentives of CNTFET appropriateness for DDA designed in this study for any analogue front end were further demonstrated by using CNTFET for DDA with the achievement of open loop differential gain of 116.03 dB with BW of 4 GHz and phase margin of 270 and common mode gain of -28.65 dB with BW of 55.14 MHz and phase margin of 270.

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Section: Literature Surveymentioning

confidence: 74%

Comparative Performance Study of Difference Differential Amplifier Using 7 nm and 14 nm FinFET Technologies and Carbon Nanotube FET

Kumar

Janakirani

Anand

et al. 2022

Journal of Nanomaterials

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“…Once the device compact models have been validated through actual experimental measurements, an excellent agreement between physical circuit performance and simulation results should be expected. With this considerations in mind, we designed both the LNA and HPA using the widely acknowledged Stanford CNT-FET model, which was tuned to our technology and to which a noise model was added as in [30].…”

Section: System Implementationmentioning

confidence: 99%

“…As previously stated, CNT-based transistors have interesting properties in terms of linearity and mobility that make them particularly well-suited for high-frequency amplifier realisation. We thus designed both the LNA and HPA for the T/R module with this type of transistors, using the Verilog-A implementation [40] of the Stanford CNT-FET model [41,42] for the simulations, with parameters tuned to the technology that is being developed to build these devices, and with an added noise model as in [30].…”

Section: Cnt-fet Amplifiersmentioning

confidence: 99%

Next-Generation Hybrid RF Front-End with MoS2-FET Supply Management Circuit, CNT-FET Amplifiers, and Graphene Thin-Film Antennas

et al. 2022

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One-dimensional (1D) and two-dimensional (2D) materials represent the emerging technologies for transistor electronics in view of their attractive electrical (high power gain, high cut-off frequency, low power dissipation) and mechanical properties. This work investigates the integration of carbon-nanotube-based field-effect transistors (CNT-FETs) and molybdenum disulphide (MoS2)-based FETs with standard CMOS technology for designing a simple analog system integrating a power switching circuit for the supply management of a 10 GHz transmitting/receiving (T/R) module that embeds a low-noise amplifier (LNA) and a high-power amplifier (HPA), both of which loaded by nanocrystalline graphene (NCG)-based patch antennas. Verilog-A models, tuned to the technology that will be used to manufacture the FETs, were implemented to perform electrical simulations of the MoS2 and CNT devices using a commercial integrated circuit software simulator. The obtained simulation results prove the potential of hybrid CNT-MoS2-FET circuits as building blocks for next-generation integrated circuits for radio frequency (RF) applications, such as radars or IoT systems.

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A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model

Cited by 2 publications

References 36 publications

Comparative Performance Study of Difference Differential Amplifier Using 7 nm and 14 nm FinFET Technologies and Carbon Nanotube FET

Comparative Performance Study of Difference Differential Amplifier Using 7 nm and 14 nm FinFET Technologies and Carbon Nanotube FET

Next-Generation Hybrid RF Front-End with MoS2-FET Supply Management Circuit, CNT-FET Amplifiers, and Graphene Thin-Film Antennas

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