A high gain E-band MMIC LNA in GaAs 0.1-&amp;#x03BC;m pHEMT process for radio astronomy applications

Lee, You-Tang; Chiong, Chau-Ching; Niu, Dow-Chih; Wang, Huei

doi:10.1109/eumic.2014.6997891

Cited by 5 publications

(1 citation statement)

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“…These devices all rely on extensive transmission line on-chip matching, dividing / combining and other passive networks [56] which may both attenuate significantly (due to the previously noted low Qfactors for passives) and cause unwanted radiation [57]. This loss translates into the degradation of noise figure in E-band low noise amplifiers (LNAs) [58], increase in phase noise of oscillators [59] and reduced efficiency of power amplifiers [31]. In the microwave domain, discrete transistors (commonly GaAs pHEMTs and GaN HEMTs [60]) are readily available off-the-shelf and are often used for custom circuit designs with off-chip passives.…”

Section: A Hybrid Component Integration In Soft Substratesmentioning

confidence: 99%

A review of key development areas in low-cost packaging and integration of future E-band mm-wave transceivers

Stander

2015

Africon 2015

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Abstract-With an ever increasing number of broadband applications in sub-Saharan Africa, mm-wave point-to-point networking has the potential to fill a niche in communications network architectures. Widespread adoption of this technology would benefit from conventional RF soft substrate integration and packaging, as opposed to system-on-chip or thick film processes. A review on the state-of-the-art in E-band soft substrate systems reveals significant reliance on MMICs. We propose that hybrid integration of active devices with off-chip passives, as well as better integration of active components in SIW, will lead to better performing E-band systems in soft substrates. Specific enabling techniques from the microwave domain are identified.

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