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This paper proposes a new design method for passive FET switches in the millimeter-wave (MMW) regime. In contrast to the conventional resonant-type switch design method, this passive FET switch circuit utilizes impedance transformation to compensate the drain-source capacitance effect for the off state at high frequencies. By means of this new design concept, aand -band monolithic-microwave integrated-circuit single-pole double-throw (SPDT) switches using a GaAs pseudomorphic high electron-mobility-transistor process are demonstrated. The -band SPDT switch has a measured isolation better than 30 dB for the off state and 2-dB insertion loss for the on state from 38 to 45 GHz, while the -band switch also shows a measured isolation better than 30 dB for the off state and 4-dB insertion loss for the on state from 53 to 61 GHz. The obtained isolation performance using this design approach outmatches previously published FET switches in the MMW frequency range.Index Terms-High electron-mobility transistor (HEMT), millimeter wave (MMW), monolithic microwave integrated circuit (MMIC), switch.

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The function of power divider is to divide to power from one input port into the divided power at multiple output ports, or to combine the power from multiple ports into the combined power at one output port. The goal of this study is to design a millimeter-wave power divider operating at the range from 32 GHz to 34 GHz. The return loss at each port and the isolation between from output ports are required to be greater than 15 dB. The insertion loss need to be less than 3.1 dB. The concept of E-plane bifurcated waveguide is proposed to implement this millimeter-wave power divider because of the concerns about operation at high-frequencies and high-power handling, capacity. A resistive film is placed inside the bifurcated waveguide in order to meet the specifications of the proposed power divider. In addition, impedance transformation is employed at output ports to convert the output waveguide to standard waveguide.Index Terms -E-plane bifurcated waveguide, impedance transformer, power divider, rectangular waveguide, resistive film.