77–110 GHz 65-nm CMOS Power Amplifier Design

Wu, Kun-Long; Lai, K. Robert; Hu, Robert; Jou, Christina F.; Niu, Dow-Chih; Shiao, Y.-S.

doi:10.1109/tthz.2014.2315451

Cited by 39 publications

(10 citation statements)

References 14 publications

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“…The PA biased at 0.9 V can deliver 20.9 dBm power at 22.3% PAE, which is among the highest PAE reported to data in W-band CMOS PAs. In terms of bandwidth, the full W-band CMOS PA in 65 nm CMOS has been reported in [171]. The MMIC PA shown in Fig.…”

Section: W-band (75-110 Ghz)mentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

139

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This paper reviews the state-of-the-art of millimeterwave power amplifiers, focussing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, GaAs, GaN and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the millimeter-wave (mm-wave) spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of mm-wave power amplifier design. Index Terms-Broadband, millimeter wave, power amplifiers. I. INTRODUCTION T HE millimeter-wave (mm-wave) spectrum is attracting a great interest for applications such as 5G and future satellite communications that go well beyond the traditional niche of military and scientific use in terms of investments and potential revenues. The most attractive feature of mm-waves compared to the RF and microwave band is the huge spectrum availability that gives a great advantage in terms of capacity for telecommunication systems. Other advantages of mm-wave systems are the compact size of circuits, especially antennas, and the intrinsic easiness of frequency reuse thanks to the high free-space attenuations. There are also some advantages that are band-specific; for example, the very high attenuation in the 60 GHz band due to oxygen absorption that enables intrinsically secure communications. On the other hand, the very high frequency of operation poses significant challenges to system and circuit design. Similarly to what happens at lower frequency, one of the most critical circuit components is the power amplifier (PA). Its

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Section: W-band (75-110 Ghz)mentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

139

View full text Add to dashboard Cite

show abstract

“…In radio‐astronomical receivers, for instance, one potential advantage in adopting the silicon technology is that it allows a greater degree of front‐end system integration, which makes feasible the construction of large focal‐plane arrays. Previously, we have designed a 77–110 GHz 65 nm‐complementary metal–oxide–semiconductor (CMOS) PA that, with chip area of 950 × 600 μm 2 , consumes 580 mW under 1.2 V bias and its OP1 dB is around 12 dBm (which can be steadily increased to 18 dBm at 2.5 V bias), and it can be used as either local oscillator driving amplifier or, with 10 dB noise figure, as radio‐frequency (RF) post‐amplifier for ultra‐wideband receivers, where P1 dB also needs to be large to avoid partial saturation [6]. However, insertion loss (IL) of the PA's output combining network, itself a pivotal if not the most critical part for this class‐A PA design, has not been thoroughly investigated.…”

Section: Introductionmentioning

confidence: 99%

IL analysis for 8‐way power combining network in 77–110 GHz 40 nm‐complementary metal–oxide–semiconductor PA design

Huang¹,

Wu²,

Wu³

et al. 2019

IET Circuits, Devices & Systems

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In this study, the authors will investigate the insertion loss (IL) of the broadband 8-way power combiner used in their millimetre-wave power amplifier (PA) design. By treating this combiner as impedance transformer under resistor-capacitor (RC)loading condition, both the characteristic impedance and electrical length of the constituting metal lines can be obtained, where the much shorter line length suggests wider bandwidth and lower IL. However, proper loss analysis must take into account the multi-reflection of voltage wave along these mismatched transmission lines, i.e. the use of the power attenuation expression e −2αL is just not accurate enough. With their derived equations, it shows that the IL of their proposed 8-way combiner can be as low as 0.92 dB at 94 GHz, which is much smaller than the 1.5 dB for the conventional quarter-wavelength combiner. Mathematics for the IL of the drain-bias shunt stub and the output DC-blocking capacitor has also been derived. As a demonstration, a 77-110 GHz 40 nm-complementary metal-oxide-semiconductor PA made of cascode transistors is then designed that has more than 18 dB gain, and its OP1 dB is around 13 dBm across the whole frequency range.

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“…Power amplifier (PA) is the key component in submillimeter wave system for the output power determined the operation distance, ability of anti-interference, and communication quality. Recently, massive D-band (110∼170 GHz) PA are presented [3,4,5,6,7,8] indicated a great attention has been paid in this field.…”

Section: Introductionmentioning

confidence: 99%

140 GHz power amplifier based on 0.5 µm composite collector InP DHBT

Zhang

et al. 2017

IEICE Electron. Express

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This paper presents a high gain, medium power amplifier for D band application based on 0.5 µm composite collector InP double heterojunction bipolar transistor (DHBT) process. The power amplifier has four ways that combined with a T-junction power combiner. And each way has four stages HBT to provide a high gain performance. The measurement results demonstrate a peak gain of 23.6 dB at 75 GHz and at 140 GHz the gain is 21.89 dB. The saturation output power is 13.7 dBm at 140 GHz with DC power consumption 250 mW.

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77–110 GHz 65-nm CMOS Power Amplifier Design

Cited by 39 publications

References 14 publications

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

IL analysis for 8‐way power combining network in 77–110 GHz 40 nm‐complementary metal–oxide–semiconductor PA design

140 GHz power amplifier based on 0.5 µm composite collector InP DHBT

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