A High Gain Ka-Band Asymmetrical GaAs Doherty Power Amplifier MMIC for 5G Applications

Değirmenci, Ahmet; Aktug, Ahmet

doi:10.23919/eumic.2019.8909611

Cited by 9 publications

(3 citation statements)

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“…It can be observed that load modulation starts at approximately 6 dB OBO. Notably, there is a difference between the impedance magnitudes, which is expected, partly due to the additional imaginary part as defined in (13).…”

Section: Simulationsmentioning

confidence: 95%

“…From (13), it is evident that Z 2 is real-valued and twice the load R. Therefore, the transistor can be optimally matched to its intrinsic optimum, i.e. Z 2 = R OPT , by selecting a load such that R OPT = 2R.…”

Section: Analysis Of Ports Terminationsmentioning

confidence: 99%

“…However, for f 0 = 14 GHz, depicted in Fig. 5a, the output power and efficiency deteriorates due to the increased value of the imaginary part of Z 1 , as expressed in (13).…”

Section: Bandwidth Analysismentioning

confidence: 99%

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A Differential Combiner for Quasi-Complete Cancellation of Output Capacitance in mm-Wave Power Amplifiers With High-$Q$ Devices

Rubio,

Azad,

Quaglia

2024

IEEE Trans. Microwave Theory Techn.

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This paper proposes a new and simpler methodology to combine two transistors for high-frequency applications. By using a λ/4 transmission line to connect the drain pads of the identical transistors, the line characteristic impedance can be chosen to almost perfectly cancel out the output capacitance at the design frequency f0. When the combined network is loaded with a real impedance, the real part of the impedance seen at each of the intrinsic devices is twice the value of that load, while the imaginary part is exactly zero for one of the transistors, and depends on f0 for the other. This imaginary part is inversely proportional to f0 and becomes relatively small with high Q-factor (defined as product between optimum intrinsic load and output capacitance susceptance) devices at the frequency of operation (f0). To demonstrate the effectiveness of this methodology, a 28 GHz Doherty Power Amplifier (DPA) based on the NP15 Microwave Monolithic Integrated Circuit (MMIC) process from WIN Semiconductors, has been designed using the proposed combining method for the main and auxiliary branches. The continuous wave (CW) characterization of this amplifier shows competitive results, which are comparable with the state of the art in terms of efficiency, output power, gain and bandwidth. Over a band between 27.5 and 29.5 GHz, the obtained saturated output power is higher than 32 dBm. The power added efficiency (PAE) at 6 dB output back-off (OBO) is in the range of 21 to 24 %, while is from 24 to 34 % at saturation. The saturated gain is between 8 and 12 dB over the above mentioned band.

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Section: Simulationsmentioning

confidence: 95%

Section: Analysis Of Ports Terminationsmentioning

confidence: 99%