A High‐<i>k</i> Fluorinated P(VDF‐TrFE)‐<i>g</i>‐PMMA Gate Dielectric for High‐Performance Flexible Field‐Effect Transistors

Shin, Eul‐Yong; Cho, Hye Jin; Jung, Seungmin; Yang, Changduk; Noh, Yong‐Young

doi:10.1002/adfm.201704780

Cited by 60 publications

(44 citation statements)

References 30 publications

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“…To examine how the chemical structures of polymer GIs affect their oxidation, subsequent SAM growth, and the electrical properties of their associated devices, we selected four high‐ k polymers ( Scheme a, left): poly(4‐vinyl alcohol) (PVA), poly(4‐vinyl phenol) (PVP), polychloroprene (PCP), and poly(acrylonitrile‐ co ‐butadiene) (PAB). PVA and PVP are linear vinyl polymers that bear numerous OH groups (denoted Group A), whereas PCP and PAB are polar rubbery polymers that lack OH groups (denoted Group B).…”

Section: Resultsmentioning

confidence: 99%

Heat‐Assisted Photoacidic Oxidation Method for Tailoring the Surface Chemistry of Polymer Dielectrics for Low‐Power Organic Soft Electronics

Kim

Kang

Cho

2019

Adv Funct Materials

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The use in low-power soft electronics of the appropriate insulating polymer materials with a high dielectric constant (k) is considered a practical alternative to that of inorganic dielectric materials, which are brittle and have high processing temperatures. However, the polar surfaces of typical high-k polymer insulators are problematic. Further, it is a huge challenge to control their surface properties without damage because of their soft and chemically fragile nature. Here, a heat-assisted photoacidic oxidation method that can be used to effectively oxidize the outermost surfaces of high-k rubbery polymer films without degradation is presented. The oxidized surfaces prepared with the developed method contain large numbers of hydroxyl groups that enable the subsequent growth of dense and ordered self-assembled monolayers (SAMs) consisting of organosilanes. The whole process modifies the surface characteristics of polymer dielectrics effectively. The mechanisms of the oxidation of polymer surfaces and the subsequent SAM growth process are investigated. The resulting surface-tailored rubbery dielectrics exhibit superior electrical characteristics when used in organic transistors. These results demonstrate that this method can be used to realize practical soft organic electronics based on high-k polymer dielectrics.

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Section: Resultsmentioning

confidence: 99%

Heat‐Assisted Photoacidic Oxidation Method for Tailoring the Surface Chemistry of Polymer Dielectrics for Low‐Power Organic Soft Electronics

Kim

Kang

Cho

2019

Adv Funct Materials

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“…In this light, many attempts to develop new high-k materials that can be inexpensively processed using novel, low cost deposition techniques have recently been carried out. Lately, a wide range of novel high dielectric constant materials ranging from high-k organic/inorganic nanocomposites, through multilayer high-k/low-k dielectric stacks to ultra-thin anodized oxides has been reported as promising alternatives to the conventional high-k insulators [20,21]. In general, the dielectric materials used in OFETs are usually divided into four main categories, namely, inorganic [22,23], organic [24,25], electrolyte [26,27], and hybrid dielectrics [28,29].…”

Section: Dielectrics: Backgroundmentioning

confidence: 99%

High Capacitance Dielectrics for Low Voltage Operated OFETs

Mohammadian¹,

Majewski²

2020

Integrated Circuits/Microchips

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Low-voltage, organic field-effect transistors (OFETs) have a high potential to be key components of low-cost, flexible, and large-area electronics. However, to be able to employ OFETs in the next generation of the electronic devices, the reduction of their operational voltage is urgently needed. Ideally, to be power efficient, OFETs are operated with gate voltages as low as possible. To fulfill this requirement, low values of transistor threshold voltage (V t) and subthreshold swing (SS) are essential. Ideally, V t should be around 0 V and SS close to 60 mV/dec, which is the theoretical limit of subthreshold swing at 300 K. This is a very challenging task as it requires the gate dielectric thickness to be reduced below 10 nm. Here, the most promising strategies toward high capacitance dielectrics for low voltage operated OFETs are covered and discussed.

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“…Therefore, their application has mostly been limited to memory . Blending with paraelectric polymers, such as polyvinyl alcohol and polymethyl methacrylate (PMMA), reduces hysteresis while maintaining high κ …”

Section: Introductionmentioning

confidence: 99%

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

et al. 2018

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The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large-area electronics, particularly thin-film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High-permittivity (κ) oxide dielectrics are a key component for achieving low-voltage and high-performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO with high-κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low-cost devices, tremendous efforts have been devoted to vacuum-free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high-κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high-κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO is outlined. Recent achievements of solution-processed high-κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water-induced, self-combustion reaction, and energy-assisted post treatments, for the realization of flexible electronics and circuits are discussed.

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A High‐k Fluorinated P(VDF‐TrFE)‐g‐PMMA Gate Dielectric for High‐Performance Flexible Field‐Effect Transistors

Cited by 60 publications

References 30 publications

Heat‐Assisted Photoacidic Oxidation Method for Tailoring the Surface Chemistry of Polymer Dielectrics for Low‐Power Organic Soft Electronics

Heat‐Assisted Photoacidic Oxidation Method for Tailoring the Surface Chemistry of Polymer Dielectrics for Low‐Power Organic Soft Electronics

High Capacitance Dielectrics for Low Voltage Operated OFETs

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

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