A High Isolation 0.15¿m Depletion-Mode pHEMT SPDT Switch Using Field-Plate Technology

Cheng, Chia-Shih; Lin, Shang-Hung; Wei, Chien‐Cheng; Chiu, Hsien‐Chin; Yang, Rong-Jyi

doi:10.1109/apmc.2007.4554849

Cited by 3 publications

(9 citation statements)

References 5 publications

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“…The transmitter is composed of a millimeter transmitter horn antenna with an omni-directional, high-power amplifier (HPA) module and up-converter module. The receiver is composed of a millimeter receiver horn antenna with a 12 beamwidth, low-noise amplifier (LNA), and down-converter module [5]. We performed measurements in an office room of a commercial building.…”

Section: Ray Tracing Accuracymentioning

confidence: 99%

“…Presently, the most employed feeding technique for slot antenna designated for wireless local area network (WLAN) operation is microstrip-fed [4] and coplanar waveguide (CPW)-fed [5]. As the CPW-fed slot antenna is generally easy to fabricate and exhibits wider impedance bandwidth than its microstrip-fed counterpart, such design is widely discussed in the antenna community [5]. In the past decade, many CPW-fed slot antennas with dissimilar shapes and sizes can be found in the open-literature [1][2][3][4][5][6][7][8], and among them, the rectangular (or square) slot shape is commonly used for broadband [1] or UWB [6][7][8] design.…”

Section: Acknowledgmentsmentioning

confidence: 99%

“…Amid different types of antenna designs for wide or broad band operation, the slot antenna design is one of the favorite candidates since it possesses the advantages such as simple structure, wide impedance bandwidth, and good bidirectional radiation characteristic [1][2][3]. Presently, the most employed feeding technique for slot antenna designated for wireless local area network (WLAN) operation is microstrip-fed [4] and coplanar waveguide (CPW)-fed [5]. As the CPW-fed slot antenna is generally easy to fabricate and exhibits wider impedance bandwidth than its microstrip-fed counterpart, such design is widely discussed in the antenna community [5].…”

Section: Acknowledgmentsmentioning

confidence: 99%

“…A ray path searching technique using the image-based viewing volume ray tube in Ref. 5 was used for the acceleration test. Except for diffraction, five reflections and one transmission order used for finding the ray path are defined.…”

Section: Acceleration Effectmentioning

confidence: 99%

“…Recently, several techniques have been proposed to optimize the technology for switching applications [1][2][3][4][5][6]. Most of those attempts focus on reducing parasitic elements of the transistor such as the drain-to-source capacitance and resistance.…”

Section: Introductionmentioning

confidence: 99%

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A high‐isolation switch based on a standard GaAs process

Zhurbenko

2011

Micro & Optical Tech Letters

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The design and evaluation of an ultra‐wideband nonreflective single port single throw switch integrated circuit is described. The switch has a measured insertion loss of <1.2 dB and isolation of typically better than 70 dB from DC to 10 GHz. The developed circuit is intended for implementation in ultra‐wideband microwave instruments and systems requiring high level of isolation. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:984–987, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25906

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Section: Ray Tracing Accuracymentioning

confidence: 99%

Section: Acknowledgmentsmentioning

confidence: 99%

Section: Acknowledgmentsmentioning

confidence: 99%

Section: Acceleration Effectmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A high‐isolation switch based on a standard GaAs process

Zhurbenko

2011

Micro & Optical Tech Letters

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Implementation of veriloga GaN HEMT model to design RF switch

Majumdar

Bag

Biswas

2015

Micro & Optical Tech Letters

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GaN HEMT model has been implemented in designing of RF switch through VerilogA. The VerilogA model is formed by experimental data as obtained from DC and RF characteristics of the HEMT. A look‐up‐table based VerilogA model has been prepared to simulate the RF switch in Cadence's spectre. The simulated value of the switch property i.e. isolation and insertion loss is found to be −40 dB to −35 dB and −0.5 dB to −2.5 dB, respectively in the 0.5–2.5 GHz frequency range. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1765–1768, 2015

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A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques

Shan,

Fu,

Wang

2024

Micromachines

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This paper presents a highly integrated C-band RF transceiver front-end design consisting of two Single Pole Double Throw (SPDT) transmit/receive (T/R) switches, a Low Noise Amplifier (LNA), and a Power Amplifier (PA) for Ultra-Wideband (UWB) positioning system applications. When fabricated using a 0.25 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process, the switch is optimized for system isolation and stability using inductive resonance techniques. The transceiver front-end achieves overall bandwidth expansion as well as the flat noise in receive mode using the bandwidth expansion technique. The results show that the front-end modules (FEM) have a typical gain of 22 dB in transmit mode, 18 dB in receive mode, and 2 dB noise in the 4.5–8 GHz band, with a chip area of 1.56 × 1.46 mm2. Based on the available literature, it is known that the proposed circuit is the most highly integrated C-band RF transceiver front-end design for UWB applications in the same process.

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A High Isolation 0.15¿m Depletion-Mode pHEMT SPDT Switch Using Field-Plate Technology

Cited by 3 publications

References 5 publications

A high‐isolation switch based on a standard GaAs process

A high‐isolation switch based on a standard GaAs process

Implementation of veriloga GaN HEMT model to design RF switch

A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques

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