2024
DOI: 10.3390/mi15020169
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A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques

Boyang Shan,
Haipeng Fu,
Jian Wang

Abstract: This paper presents a highly integrated C-band RF transceiver front-end design consisting of two Single Pole Double Throw (SPDT) transmit/receive (T/R) switches, a Low Noise Amplifier (LNA), and a Power Amplifier (PA) for Ultra-Wideband (UWB) positioning system applications. When fabricated using a 0.25 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process, the switch is optimized for system isolation and stability using inductive resonance techniques. The transceiver front-end achieves overa… Show more

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