A high-k Y<inf>2</inf>TiO<inf>5</inf> charge trapping layer for high-density flash memory application

Abstract

Recently, SONOS high-k memories have attracted much attention for the application in the next-generation nonvolatile memories [1] due to fast program/erase speed, low programming voltage and small power consumption. Rare-earth oxide and yttrium oxide materials have attracted the great potential candidates for metal-oxide-high-k material-oxide-silicon (MOHOS)-type memory based on thermodynamic compatibility with Si considerable, moderately high dielectric constant, high conduction band offset over 2 eV [2][3]. In addition, it has been reported [4] that lanthanide (Nd, Tb, or Dy) doped TiO x dielectric films shows excellent electrical characteristics.