A High-Linearity Tapered Distributed Amplifier for Ultra-Wideband-Applications

Abstract

In this paper the analysis, design and characterization of a 12 GHz high-linearity distributed amplifier for ultrawideband applications are presented. The amplifier is fabricated in a low-cost 0.25 µm SiGe BiCMOS technology. The circuit integrates four cascode gain cells, which are capacitively coupled to the base line. The collector line has been tapered for efficiency improvement. 12 dBm output power have been measured at the 1-dB compression point (P 1dB ) in the desired frequency range with an associated gain of 11 dB and a gain flatness of ±1 dB. The power dissipation of the amplifier is 132 mW from a 3.3 V supply. The chip size is 1.69 mm 2 . Good agreement between simulation and measurement have been achieved.

High‐efficiency tapered distributed power amplifier with 2‐μm GaAs HBT process

“…Also, without the absorption load, the output power and efficiency of distributed amplifiers can be improved further. So the tapered distribution technique raised more interest in the design of ultra‐wide band power amplifiers [6–9].…”