A high-performance and low-noise cmos image sensor with an expanding photodiode under the isolation oxide

Itonaga, K.; Abe, Hirofumi; Yoshihara, Ikuo; Hirayama, Teruo

doi:10.1109/iedm.2005.1609474

Cited by 6 publications

(1 citation statement)

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“…This problem is avoidable by isolating the diffusion layer using an expanding photodiode design for isolation (EDI). 7) However, in conventional low-thermalbudget annealing for impurity diffusion suppression, the reduction in the number of crystal defects has not yet been achieved. 8) For CMOS image sensors, B diffusion suppression by a low-thermal-budget process is desirable for accurate impurity density control since an accurate energy depth design in photodiode junctions is necessary for light intensity measurement by counting light-generated carriers.…”

Section: Introductionmentioning

confidence: 99%

Reduction in number of crystal defects in a p⁺Si diffusion layer by germanium and boron cryogenic implantation combined with sub-melt laser spike annealing

Murakoshi

Harada

Miyano

et al. 2017

Jpn. J. Appl. Phys.

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To reduce the number of crystal defects in a p+Si diffusion layer by a low-thermal-budget annealing process, we have examined crystal recovery in the amorphous layer formed by the cryogenic implantation of germanium and boron combined with sub-melt laser spike annealing (LSA). The cryogenic implantation at −150 °C is very effective in suppressing vacancy clustering, which is advantageous for rapid crystal recovery during annealing. The crystallinity after LSA is shown to be very high and comparable to that after rapid thermal annealing (RTA) owing to the cryogenic implantation, although LSA is a low-thermal-budget annealing process that can suppress boron diffusion effectively. It is also shown that in the p+Si diffusion layer, there is high contact resistance due to the incomplete formation of a metal silicide contact, which originates from insufficient outdiffusion of surface contaminants such as fluorine. To widely utilize the marked reduction in the number of crystal defects, sufficient removal of surface contaminants will be required in the low-thermal-budget process.

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Section: Introductionmentioning

confidence: 99%

Reduction in number of crystal defects in a p⁺Si diffusion layer by germanium and boron cryogenic implantation combined with sub-melt laser spike annealing

Murakoshi

Harada

Miyano

et al. 2017

Jpn. J. Appl. Phys.

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Advances In The Image Sensor: The Critical Element In The Performance Of Cameras

Narabu¹

2011

AIP Conference Proceedings

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Low-noise Imaging System with CMOS Sensor for High-Quality Imaging

Sumi

2006

2006 International Electron Devices Meeting

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Image sensors are widely used in the high-volume markets of digital still cameras and camcorders. In recent years, mobile phones with cameras have employed CMOS image sensors because of their low power consumption and single power supply. Initially, CMOS image sensors were inexpensive and provided poor imaging performance. However, more recently, some CMOS image sensors have achieved high-quality imaging performance comparable to that of the CCD. The present paper reviews the challenges of image sensor development over the last few decades and discusses the technology and design architecture for low-noise mega-pixel CMOS image sensors.

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A high-performance and low-noise cmos image sensor with an expanding photodiode under the isolation oxide

Cited by 6 publications

References 0 publications

Reduction in number of crystal defects in a p⁺Si diffusion layer by germanium and boron cryogenic implantation combined with sub-melt laser spike annealing

Reduction in number of crystal defects in a p⁺Si diffusion layer by germanium and boron cryogenic implantation combined with sub-melt laser spike annealing

Advances In The Image Sensor: The Critical Element In The Performance Of Cameras

Low-noise Imaging System with CMOS Sensor for High-Quality Imaging

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A high-performance and low-noise cmos image sensor with an expanding photodiode under the isolation oxide

Cited by 6 publications

References 0 publications

Reduction in number of crystal defects in a p+Si diffusion layer by germanium and boron cryogenic implantation combined with sub-melt laser spike annealing

Reduction in number of crystal defects in a p+Si diffusion layer by germanium and boron cryogenic implantation combined with sub-melt laser spike annealing

Advances In The Image Sensor: The Critical Element In The Performance Of Cameras

Low-noise Imaging System with CMOS Sensor for High-Quality Imaging

Contact Info

Product

Resources

About

Reduction in number of crystal defects in a p⁺Si diffusion layer by germanium and boron cryogenic implantation combined with sub-melt laser spike annealing

Reduction in number of crystal defects in a p⁺Si diffusion layer by germanium and boron cryogenic implantation combined with sub-melt laser spike annealing