No abstract

It was found that a high concentration of holes was generated without any post-annealing by boron ion implantation into silicon in the high-dose region of more than 1×1016 cm−2. X-ray photoelectron spectroscopy and Fourier transform infrared absorption spectrum revealed that B12 icosahedra were created just after implantation. The generation of holes can be explained by the model in which B12 icosahedra act as a double acceptor.

Depth profiling of ultrashallow B implants in silicon using a magnetic-sector secondary ion mass spectrometry instrument J.Depth scale distortions in shallow implant secondary ion mass spectrometry profiles Estimation methods for ultra-shallow profiling with secondary ion mass spectrometry ͑SIMS͒ were investigated. The depth and concentration of ultra-shallow profiles were calibrated using multi-delta-doped samples and bulk-doped samples. Boron profiles, whose implantation energy is 200 eV or less, were measured by backside SIMS analysis in order to minimize the atomic mixing effect. This analysis enabled accurate junction depth measurements for even 200 eV boron implanted samples when the primary oxygen ion energy was 500 eV or less, but the sample preparation time was relatively long. SIMS depth resolution functions were then extracted from surface-side and backside ͑true͒ profiles in order to deconvolute degraded surface-side profiles. This deconvolution analysis of SIMS ͑surface-side͒ profiles, using the depth resolution functions, provided profiles of similar quality to those obtained by backside SIMS analysis and was a relatively quick process.

A high hole concentration region of about 1×1021 cm-3 was generated without any post-annealing by the implantation of high doses of boron into silicon substrates. X-ray photoelectron spectroscopy (XPS) measurement and Fourier transform IR spectroscopy (FTIR) absorption spectra revealed that B12 icosahedra were created in as-implanted samples. A new model of the generation of holes is proposed in which B12 icosahedron acts as a double acceptor.

No abstract