10–15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing

Ito, Takayuki; Iinuma, T.; Murakoshi, Atsushi; Akutsu, Haruko; Suguro, K.; Arikado, T.; Okumura, Katsuya; Yoshida, Masaki; Owada, Tatsushi; Imaoka, Yasuhiro; Murayama, H.; Kusuda, T

doi:10.1143/jjap.41.2394

Cited by 88 publications

(53 citation statements)

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“…36 As the junction depth in the MLD process is limited by temperature and duration of anneal, the diffusion of As in Si using the MLD method could be further fine-tuned in terms of shallower junction depths by using emerging spike annealing techniques such as flashlamp annealing and laser annealing. [37][38][39] Application of the MLD Strategy to Nanowire Devices…”

Section: Carrier Profilingmentioning

confidence: 99%

Organo-arsenic Molecular Layers on Silicon for High-Density Doping

O’Connell

Verni

Gangnaik

et al. 2015

ACS Appl. Mater. Interfaces

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This article describes for the first time the controlled monolayer doping (MLD) of bulk and nanostructured crystalline silicon with As at concentrations approaching 2 × 10 20 atoms cm −3 . Characterization of doped structures after the MLD process confirmed that they remained defect-and damage-free, with no indication of increased roughness or a change in morphology. Electrical characterization of the doped substrates and nanowire test structures allowed determination of resistivity, sheet resistance, and active doping levels. Extremely high As-doped Si substrates and nanowire devices could be obtained and controlled using specific capping and annealing steps. Significantly, the As-doped nanowires exhibited resistances several orders of magnitude lower than the predoped materials.

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Section: Carrier Profilingmentioning

confidence: 99%

Organo-arsenic Molecular Layers on Silicon for High-Density Doping

O’Connell

Verni

Gangnaik

et al. 2015

ACS Appl. Mater. Interfaces

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“…This temperature is far above the Si melting point of 1410°C. The limited cluster dissociation leads to poor dopant activation [47][48][49] and, by related mechanisms, to the incomplete removal of EOR defects [49][50][51] commonly observed in microsecond annealing.…”

Section: Fig 7 Data Ofmentioning

confidence: 99%

Mechanistic benefits of millisecond annealing for diffusion and activation of boron in silicon

Kwok

Braatz

Paul

et al. 2009

Journal of Applied Physics

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Millisecond annealing techniques with flash lamps or lasers have become increasingly common for activating dopants and eliminating implantation-induced damage after ion implantation for transistor junction formation in silicon. Empirical data show that such techniques confer significant benefits, but key physical mechanisms underlying these benefits are not well understood. The present work employs numerical simulation and analytical modeling to show that for boron, millisecond annealing reduces unwanted dopant spreading by greatly reducing the time for diffusion, which more than compensates for an increased concentration of Si interstitials that promote dopant spreading. Millisecond annealing also favorably alters the relative balance of boron interstitial sequestration by the crystal lattice vs interstitial clusters, which leads to improved electrical activation at depths just short of the junction.

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“…An important element for fabricating transistors for sub 90 nm technologies is reducing poly depletion [7,8]. To provide a shorter annealing time, flash annealing can be used for annealing the poly implant.…”

Section: Application To Cmos Transistorsmentioning

confidence: 99%