The effects of the nitrogen in the HfSiON gate dielectric on the electrical and thermal properties of the dielectric were investigated. It is clearly demonstrated that nitrogen enhances the dielectric constant of silicates. High dielectric constants of the HfSiON are maintained and boron penetration is substantially suppressed in the HfSiON during high temperature annealing. These properties are ascribed to the homogeneity of the bond structure in the film containing nitrogen through high temperature annealing.

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Using n+/p junctions formed by solid phase diffusion, a clear correlation between junction leakage and NiSi thermal instability was readily established. After forming an NiSi layer on damage-free junctions, various post-annealing processes at around the silicidation temperature were applied. A consistent and systematic rise of the leakage level was observed with the increase of the annealing time and the temperature. The migration of the released Ni atoms away from the NiSi layer, the subsequent clustering of the migrant Ni atoms, and the eventual formation of generation-recombination centers deep inside the Si substrate were identified as the basic components of the principal leakage mechanism. Detailed analysis of the thermally stimulated ingressive movement of the leakage-depth profiles revealed a substantial Ni burst at an early stage of annealing. This anomalous Ni burst imposes severe restrictions on junction shallowing for NiSi technology and sets a strict upper limit on the allowable process temperature for effective leakage suppression.

Ultra-thin nitrogen incorporated BO2 (ZION) film is successfully prepared by low temperature oxidation of ZrN.Capacitance equivalent thickness (CET) of 15A with Jg=lmA/cm2@Vg=-1V is demonstrated. There is no increase in CET up to 1OOO"C. Silicide formation at poly-Si/ZrOz/Si stack at high temperature annealing is also inhibited. In addition, the boron penetration from p+ poly-Si to Si substrate is substantially suppressed.

Depth profiling of ultrashallow B implants in silicon using a magnetic-sector secondary ion mass spectrometry instrument J.Depth scale distortions in shallow implant secondary ion mass spectrometry profiles Estimation methods for ultra-shallow profiling with secondary ion mass spectrometry ͑SIMS͒ were investigated. The depth and concentration of ultra-shallow profiles were calibrated using multi-delta-doped samples and bulk-doped samples. Boron profiles, whose implantation energy is 200 eV or less, were measured by backside SIMS analysis in order to minimize the atomic mixing effect. This analysis enabled accurate junction depth measurements for even 200 eV boron implanted samples when the primary oxygen ion energy was 500 eV or less, but the sample preparation time was relatively long. SIMS depth resolution functions were then extracted from surface-side and backside ͑true͒ profiles in order to deconvolute degraded surface-side profiles. This deconvolution analysis of SIMS ͑surface-side͒ profiles, using the depth resolution functions, provided profiles of similar quality to those obtained by backside SIMS analysis and was a relatively quick process.