Ultra-thin nitrogen incorporated BO2 (ZION) film is successfully prepared by low temperature oxidation of ZrN.Capacitance equivalent thickness (CET) of 15A with Jg=lmA/cm2@Vg=-1V is demonstrated. There is no increase in CET up to 1OOO"C. Silicide formation at poly-Si/ZrOz/Si stack at high temperature annealing is also inhibited. In addition, the boron penetration from p+ poly-Si to Si substrate is substantially suppressed.

A highly reliable, 65nm-node Cu interconnect technology has been developed with I 80nndZOOnm-pitched lines COnneCted through $IOOnm-vias. A porous SiOCH film (k=2.5) with sub-nanometer pores is introduced for the inter-metal dielectrics (IMD) on a non-porous, rigid SiOCH film (k=2.9) for the via-intra-line dielectrics (via-ILD). A key breakthrough is a special pore-seal technique, in which the trench-etched surface of the porous SiOCH is covered with an ultra-thin, low-k organic silica film (k=2.7), thus improving the lineto-line TDDB reliability of the narrow-pitched Cu lines.The filly-scaled-down, 65nm-node Cu interconnects with the porous-on-rigidSiOCH hybrid structure achieve excellent performance and reliability.