A high performance CMOS LNA for system-on-chip GPS

Bokinge, B.; Einerman, W.; Emericks, A.; Grewing, Christian; Pettersson, O.; Theil, D.; Waasen, S. van

doi:10.1109/apmc.2006.4429431

Cited by 5 publications

(3 citation statements)

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“…Hence, a good amplifier with very low noise figure(NF) was critical for enabling robust performance in obstructed environment. Therefore, the low-noise-amplifier(LNA) was one of the key parts of the GPS receivers [3,4]. Moreover, due to the possible large interference signals at the input of the LNA, it had to provide high linearity [5], thus preventing the intermodulation tones created by the interference signal from corrupting the carrier signal.…”

Section: Introductionmentioning

confidence: 99%

A Low Noise Amplifier with 1.1dB Noise Figure and +17dBm OIP3 for GPS RF Receivers

Xiang

Luo

Zhou

et al. 2013

AMM

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A 1.575GHz SiGe HBT(heterojunction bipolar transistor) low-noise-amplifier(LNA) optimized for Global Positioning System(GPS) L1-band applications was presented. The designed LNA employed a common-emitter topology with inductive emitter degeneration to simultaneously achieve low noise figure and input impedance matching. A resistor-bias-feed circuit with a feedback resistor was designed for the LNA input transistor to improve the gain compression and linearity performance. The LNA was fabricated in a commercial 0.18µm SiGe BiCMOS process. The LNA achieves a noise figure of 1.1dB, a power gain of 19dB, a input 1dB compression point(P1dB) of -13dBm and a output third-order intercept point(OIP3) of +17dBm at a current consumption of 3.6mA from a 2.8V supply.

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Section: Introductionmentioning

confidence: 99%

A Low Noise Amplifier with 1.1dB Noise Figure and +17dBm OIP3 for GPS RF Receivers

Xiang

Luo

Zhou

et al. 2013

AMM

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“…The process sistor. γ is a bias dependent factor and g d0 is zero bias drain conductance (Bokinge et al, 2006;Shaeffer and Lee, 1997). Optimum values for zero bias drain conductance, gate resistance and the resistance of matching inductor should be achieved for a better noise performance.…”

Section: Figure 5: Contribution Of Noise Sources In Lna Circuitmentioning

confidence: 99%

“…Galileo/GPS combined system is under development and this will allow the realization of much higher precision applications (Alvarado et al, 2007). On the other hand, the Assisted GPS (A-GPS) concept necessitates the integration of GPS receiver into the mobile phone requiring improvement in receiver sensitivity, linearity and power consumption (Bokinge et al, 2006;van Diggelen, 2002). The demand is more intensive on highly integrated, compact solutions.…”

Section: Introductionmentioning

confidence: 99%

CMOS low noise amplifiers for 1.575 GHz GPS applications

Isikhan

Richter

2009

Adv. Radio Sci.

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Abstract. This paper presents Low Noise Amplifier (LNA) versions designed for 1.575 GHz L1 Band Global Positioning System (GPS) applications. A 0.35 µm standard CMOS process is used for implementation of these design versions. Different versions are designed to compare the results, analyze some effects and optimize some critical performance criteria. On-chip inductors with different quality factors and a slight topology change are utilized to achieve this variety. It is proven through both on-wafer and on-PCB measurements that the LNA versions operate at a supply voltage range varying from 2.1 V to 3.6 V drawing a current of 10 mA and achieve a gain of 13 dB to 17 dB with a Noise Figure (NF) of 1.5 dB. Input referred 1 dB compression point (ICP) is measured as −5.5 dBm and −10 dBm for different versions.

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