A High-Performance Embedded SiC Power Module Based on a DBC-Stacked Hybrid Packaging Structure

Huang, Zhizhao; Cai, Chao; Xie, Yue; Yan, Yiyang; Kang, Yong; Luo, Fang

doi:10.1109/jestpe.2019.2943635

Cited by 36 publications

(16 citation statements)

References 27 publications

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“…In addition, Chen et al. have further optimized the abovementioned structure in 2020 [64]. In their design, the laminated power loop in the power module design not only reduces the area of the commutation loop but also applies the mutual inductance offset principle, as shown in Figure 15b.…”

Section: Power Loop Parasitic Inductancementioning

confidence: 99%

Review of the designs in low inductance SiC half‐bridge packaging

Yang

et al. 2022

IET Power Electronics

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Silicon carbide (SiC) device has become the primary choice for high-efficiency power electronic equipment due to its excellent performance. However, its higher switching frequency and faster switching speed have also incurred new challenges, such as low parasitic inductance packaging. Despite a significant amount of literature to overview the low parasitic inductance packages, most of them focus on total parasitic inductance from different packaging technology. Here, from the viewpoint of partial inductance which includes gate loop, power loop and common source, the designs for different inductances are surveyed. The power loop is further discussed from power terminals, bonding wires and direct bonded copper (DBC) conductor traces. The effects and sources of these inductances are analyzed. Furthermore, the typical design solutions to reduce the inductances are summarized. Finally, the challenges of SiC packages are presented.

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Section: Power Loop Parasitic Inductancementioning

confidence: 99%

Review of the designs in low inductance SiC half‐bridge packaging

Yang

et al. 2022

IET Power Electronics

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“…However, the electrical conductivity is not a constant value but a complex parameter with a nonlinear relationship to temperature and local electric fields. The current research on power module packaging insulation mainly focuses on reducing the maximum electric field at the "triple junction" in the packaging insulation by increasing the thickness of the ceramic substrate [7], adjusting the offset of the substrate metal layer [8], improving the pad size and corner curvature of the substrate [9,10]. However, the variation of electrical conductivity of insulating materials with the local electric field and temperature has not been considered in the existing studies.…”

Section: Related Work On Nonlinear Electrical Conductivity Of Packagi...mentioning

confidence: 99%

Optimization Design of Packaging Insulation for Half-Bridge SiC MOSFET Power Module Based on Multi-Physics Simulation

Wang

Ding

et al. 2022

Energies

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With the development of power modules for high voltage, high temperature, and high power density, their size is becoming smaller, and the packaging insulation experiences higher electrical, thermal, and mechanical stress. Packaging insulation needs to meet the requirement that internal electric field, temperature, and mechanical stress should be as low as possible. Focusing on the coupling principles and optimization design among electrical, thermal, and mechanical stresses in the power module packaging insulation, a multi-objective optimization design method based on Spice circuit, finite element field numerical calculation, and multi-objective gray wolf optimizer (MOGWO) is proposed. The packaging insulation optimal design of a 1.2 kV SiC MOSFET half-bridge power module is presented. First, the high field conductivity characteristics of the substrate ceramic and encapsulation silicone of the packaging insulation material were tested at different temperatures and external field strengths, which provided the key insulation parameters for the calculation of electric field distribution. Secondly, according to the mutual coupling principles among electric–thermal–mechanical stress, the influence of packaging structure parameters on the electric field, temperature, and mechanical stress distribution of packaging insulation was studied by finite element calculation and combined with Spice circuit analysis. Finally, the MOGWO algorithm was used to optimize the electric field, temperature, and mechanical stress in the packaging insulation. The optimal structural parameters of the power module were used to fabricate the corresponding SiC MOSFET module. The fabricated module is compared with a commercial module by the double-pulse experiment and partial discharge experiment to verify the feasibility of the proposed design method.

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“…Some examples of modular SiC MOSFET power stages can be found in [ 79 , 80 , 81 ]. Jørgensen et al [ 79 ] proposed a 10 kV single-switch module adopting −5~20 V hard-switched Littlefuse IXRFD630, Kelvin connection, no external gate resistance for the fastest switching speed possible, and low inductance design for better heat dissipation.…”

Section: Review On Sic Mosfet Driving Circuitsmentioning

confidence: 99%

“…Jørgensen et al [ 79 ] proposed a 10 kV single-switch module adopting −5~20 V hard-switched Littlefuse IXRFD630, Kelvin connection, no external gate resistance for the fastest switching speed possible, and low inductance design for better heat dissipation. In [ 80 ], a 1200 V/120 A HB module was designed based on a direct bonding copper-stacked hybrid packaging structure for minimized thermal resistance and commutation power loop inductance. The designed module was tested as a 5.5 kW single-phase inverter, yielding 97.7% efficiency, and the power loss was 28.3% less than Cree HB module CAS120M12BM2.…”

Section: Review On Sic Mosfet Driving Circuitsmentioning

confidence: 99%

“…Next, the conventional and emerging applications of active gate drive were also reviewed, including EMI noise mitigation, dead-time adaption, motor drive, reliability enhancement of SiC MOSFET, and parallel SiC MOSFET connection. Some examples of modular SiC MOSFET power stages can be found in [79][80][81]. Jørgensen et al [79] proposed a 10 kV single-switch module adopting −5~20 V hard-switched Littlefuse IXRFD630, Kelvin connection, no external gate resistance for the fastest switching speed possible, and low inductance design for better heat dissipation.…”

Section: Brief Summary Of Reviewed Sic Mosfet Driving Circuitsmentioning

confidence: 99%

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Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

2021

Micromachines

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Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabilities of higher switching frequencies with less switching and conduction losses. However, to make the most of their advantages, it is crucial to understand the intrinsic differences between WBG- and Si-based switching devices and investigate effective means to safely, efficiently, and reliably utilize the WBG devices. This paper aims to provide engineers in the power engineering field a comprehensive understanding of WBG switching devices’ driving requirements, especially for mid- to high-power applications. First, the characteristics and operating principles of WBG switching devices and their commercial products within specific voltage ranges are explored. Next, considerations regarding the design of driving circuits for WBG switching devices are addressed, and commercial drivers designed for WBG switching devices are explored. Lastly, a review on typical papers concerning driving technologies for WBG switching devices in mid- to high-power applications is presented.

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A High-Performance Embedded SiC Power Module Based on a DBC-Stacked Hybrid Packaging Structure

Cited by 36 publications

References 27 publications

Review of the designs in low inductance SiC half‐bridge packaging

Review of the designs in low inductance SiC half‐bridge packaging

Optimization Design of Packaging Insulation for Half-Bridge SiC MOSFET Power Module Based on Multi-Physics Simulation

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

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