A High Performance MRAM Cell Through Single Free-Layer Dual Fixed-Layer Magnetic Tunnel Junction

The exciting properties of multi-valued logic (MVL) in overcoming the limitations of binary systems have led to widespread research on this topic. Considering various types of MVL, quaternary logic is more compatible with the existing binary systems. This paper proposes a nonvolatile quaternary flip-flop (NQFF) based on the unique features of the carbon nanotube field-effect transistors (CNTFETs) and magnetic tunnel junctions (MTJs). The proposed NQFF utilizes Spin-Hall effect (SHE)-assisted spin-transfer torque (STT) MTJs to provide nonvolatility with lower write energy, and multi-Vt gate-all-around (GAA) CNTFETs offer higher performance. On the other side, due to the usage of a shadow latch and the design of the proposed circuit, the delay of MTJ switching does not affect the delay of the whole circuit. The simulation results show that the proposed NQFF offers 50% lower PDP when the system is idle for only 25% of its total operational time.

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Towards Nonvolatile Spintronic Quaternary Flip-Flop and Register Design

BahmanAbadi

Amirany

Moaiyeri

et al. 2023

SPIN

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A High Performance MRAM Cell Through Single Free-Layer Dual Fixed-Layer Magnetic Tunnel Junction

Cited by 1 publication

References 29 publications

Towards Nonvolatile Spintronic Quaternary Flip-Flop and Register Design

Towards Nonvolatile Spintronic Quaternary Flip-Flop and Register Design

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