A high performance self-powered ultraviolet photodetector based on a p-GaN/n-ZnMgO heterojunction

Zhu, Yan‐Rong; Liu, Kewei; Ai, Qiu; Hou, Qichao; Chen, Xing; Zhang, Zhenzhong; Xie, Xiuhua; Li, Binghui; Shen, Dezhen

doi:10.1039/c9tc06416h

Cited by 60 publications

(28 citation statements)

References 32 publications

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“…Now let us discuss two different photocurrent generation mechanisms that can exist in semiconductor photodetectors 29 . First, a junction of two dissimilar materials can yield the photovoltaic effect, in which the dissimilarity can be different dopant types (homojunction), different materials themselves (heterojunction), and the contact between metal and semiconductor (Schottky-type) 4,30 . As photons impinging on the junction are absorbed, the absorbed photons produce free charge carriers within the depletion region.…”

Section: Resultsmentioning

confidence: 99%

Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure

Pandit

Schubert

Cho

2020

Sci Rep

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A dual-functional ultraviolet (UV) photodetector with a large UV-to-visible rejection ratio is presented, in which interdigitated finger-type two-dimensional graphene electrodes are introduced to an AlGaN/GaN heterostructure. Two photocurrent generation mechanisms of photovoltaic and photoconductive dominances coexist in the device. The dominance of the mechanisms changes with the induced bias voltage. Below a threshold voltage, the device showed fairly low responsivities but fast response times, as well as a constant photocurrent against the induced bias. However, the opposite characteristics appeared with high bias voltage. Specifically, above the threshold voltage, the device showed high responsivities with additional gain, but slow rise and recovery times. For instance, the responsivity of 10.9 A/W was observed with the gain of 760 at the induced bias voltage of 5 V. This unique multifunctionality enabled by the combination of an AlGaN/GaN heterostructure with graphene electrodes facilitates the development of a single device that can achieve multiple purposes of photodetection.

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Section: Resultsmentioning

confidence: 99%

Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure

Pandit

Schubert

Cho

2020

Sci Rep

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“…Therefore, it is a big concern in the present energy scenario. Hence, a lot of research is being focussed these days on achieving self-powered or zero-biased PDs [24,25], which utilize a built-in electric potential for the effective charge carrier separation. The extensively used technique for fabricating self-powered PDs is by utilizing a p-n junction, where a strong electric field is created at the interface, and therefore, the device can operate in zero-bias mode.…”

Section: Power Consumptionmentioning

confidence: 99%

“…The mechanism of self-powered photodetection has been explained based on the presence of interfacial internal electric field. Recently, a high-performance PD based on the p-GaN/n-ZnMgO heterojunction has been demonstrated [24]. The PD shows a clear rectifying I-V behavior characterized with a turn-on voltage of ~2.5 V. At zero-bias condition, the device exhibits a responsivity of 196 mAW −1 at a wavelength of 362 nm.…”

Section: Iii-nitrides and Their Heterostructures For Self-driven Photodetectionmentioning

confidence: 99%

Group III-Nitrides and Their Hybrid Structures for Next-Generation Photodetectors

Singh¹,

Roul²,

Krupanidhi³

2021

Light-Emitting Diodes and Photodetectors - Advances and Future Directions [Working Title]

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In the last few decades, there has been a phenomenal rise and evolution in the field of III–Nitride semiconductors for optoelectronic applications such as lasers, sensors and detectors. However, certain hurdles still remain in the path of designing high-performance photodetectors (PDs) based on III-Nitride semiconductors considering their device performance. Recently, a lot of progress has been achieved in devices based on the high quality epilayers grown by molecular beam epitaxy (MBE). Being an ultra-high vacuum environment based-technique, MBE has enabled the realization of high-quality and highly efficient PDs which have exhibited competitive figures of merit to that of the commercial PDs. Moreover, by combining the novel properties of 2D materials with MBE-grown III-Nitrides, devices with enhanced functionalities have been realized which would pave a way towards the next-generation photonics. In the current chapter, the basic concepts about photodetection have been presented in detail, followed by a discussion on the basic properties of the III-Nitride semiconductors, and the recent advancements in the field of MBE-grown III-Nitrides-based PDs, with an emphasis on their hybrid structures. Finally, an outlook has been provided highlighting the present shortcomings as well as the unresolved issues associated with the present-day devices in this emerging field of research.

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“…Tuy nhiên, những linh kiện nhạy quang UV truyền thống dựa trên vật liệu Silic lại có những hạn chế là bề rộng vùng cấm hẹp, cần phải có màng lọc để loại đi những photon có tần số thấp [2], [3]. Chính vì vậy, các nhà nghiên cứu đã tìm ra các vật liệu bán dẫn khác có bề rộng vùng cấm rộng hơn như GaN, Ga2O3, ZnO... [4]- [7]. Trong đó, TiO2 nổi lên như một vật liệu tiềm năng với bề rộng vùng cấm rộng và có tính chất vật lý, hóa học nổi bật.…”

Section: Giới Thiệuunclassified

Chế Tạo Linh Kiện Nhạy Quang Vùng Bước Sóng Uv Bằng Phương Pháp Dung Dịch Dựa Trên Tiếp Xúc Dị Thể P-N Từ Các Vật Liệu Tio2, Nio Và Các-Bon

Nam¹,

Ha²,

Cương³

et al. 2021

TNUJST

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Trong nghiên cứu này, linh kiện nhạy quang vùng bước sóng UV nhờ vào hiệu ứng quang dẫn của một số chất bán dẫn vùng cấm rộng như titan đioxit (TiO2), niken oxit (NiO) được chế tạo bằng phương pháp quay phủ dung dịch. Từ đó, linh kiện được hoàn thành có cấu trúc từ dưới lên trên lần lượt là FTO/TiO2/NiO/Cac-bon. Nguồn sáng Led có bước sóng 365 nm đã được sử dụng trong phép đo độ nhạy và đặc tính Vôn-Ampe (I-V) của linh kiện. Các kết quả đo của linh kiện hoàn chỉnh như: độ nhạy (Responsivity) đạt đến R=17,5 (tại 0V) và R=250 (tại 0,5V); chỉ số phát hiện (Detectivity) cũng rất cao với D=1013 Jones; thời gian đáp ứng τr=0,35 s và thời gian suy giảm τf=0,3 s; điện áp hở mạch Voc=0,45 V. Khả năng hoạt động thực tế của linh kiện được kiểm chứng bằng cách mắc nối tiếp với một mô-tơ (1 V và 30 mA). Tất cả các kết quả đã thu được cho thấy linh kiện mà nhóm chế tạo có độ nhạy cao có khả năng hoạt động tự cấp nguồn và quan trọng nhất là có tính ứng dụng cao trong nhiều lĩnh vực đời sống.

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A high performance self-powered ultraviolet photodetector based on a p-GaN/n-ZnMgO heterojunction

Abstract: A high performance p-GaN/n-ZnMgO heterojunction photodiode was demonstrated and investigated.

Cited by 60 publications

References 32 publications

Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure

Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure

Group III-Nitrides and Their Hybrid Structures for Next-Generation Photodetectors

Chế Tạo Linh Kiện Nhạy Quang Vùng Bước Sóng Uv Bằng Phương Pháp Dung Dịch Dựa Trên Tiếp Xúc Dị Thể P-N Từ Các Vật Liệu Tio2, Nio Và Các-Bon

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