Ultraviolet (UV) photodetectors have attracted more and more attention due to their great potential applications in missile tracking, flame detecting, pollution monitoring, ozone layer monitoring, and so on. Owing to the special characteristics of large bandgap, solution processable, low cost, environmentally friendly, etc., wide bandgap oxide semiconductor materials, such as ZnO, ZnMgO, Ga 2 O 3 , TiO 2 , and NiO, have gradually become a series of star materials in the field of semiconductor UV detection. In this paper, a review is presented on the development of UV photodetectors based on wide bandgap oxide semiconductor films.

Recent investigations indicate that the performance of organic-inorganic perovskite optoelectronic devices can be improved by combining the perovskites and the inorganic materials. However, very few studies have focused on the investigation of perovskites/inorganic semiconductor hybrid UV photodetectors and their detailed performance-enhancement mechanism is still not very clear. In this work, a CHNHPbCl/ZnO UV photodetector has been first demonstrated and investigated. Both the photoresponsivity and response speed of the hybrid device are higher than those of pure CHNHPbCl and ZnO devices. The photoluminescence and transient absorption spectra indicate that the photoinduced electron transfer between CHNHPbCl and ZnO should be responsible for the performance enhancement of the hybrid device. In addition, the high crystal quality of CHNHPbCl on ZnO film is another important reason for the excellent UV detection performance. Our findings in this work provide new insights into the intrinsic photophysics essential for perovskite optoelectronic devices.

A high performance p-GaN/n-ZnMgO heterojunction photodiode was demonstrated and investigated.