Ultraviolet photodetectors based on wide bandgap oxide semiconductor films

Zhou, Changqi; Ai, Qiu; Chen, Xing; Gao, Xiaoya; Liu, Kewei; Shen, Dezhen

doi:10.1088/1674-1056/28/4/048503

Cited by 55 publications

(30 citation statements)

References 140 publications

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“…The vertical Schottky photodiode should satisfy this requirement. Although great progress has been made in Ga 2 O 3 photodetectors, the responsivity remains relatively low [76]. On the other hand, Schottky photodiodes have many advantages over MSM photodetectors, such as higher response speed and possible zero bias operation due to the builtin electric field, high quantum efficiency, low dark current, and high UV/dark current ratio because of the existence of Schottky barrier [77].…”

Section: Solar-blind Photodetectorsmentioning

confidence: 99%

Current State of Ga2O3-Based Electronic and Optoelectronic Devices. Brief Review

Petrenko¹,

Kovach²,

Bauman³

et al. 2021

Rev Adv Mater Tech

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Section: Solar-blind Photodetectorsmentioning

confidence: 99%

Current State of Ga2O3-Based Electronic and Optoelectronic Devices. Brief Review

Petrenko¹,

Kovach²,

Bauman³

et al. 2021

Rev Adv Mater Tech

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“…As photoelectronic devices that can accurately change incident light signals into electrical signals, photodetectors (PDs) have attracted much attention in recent years due to their wide applications in multiple detection bands. − For example, ultraviolet photodetectors (UVPDs) play essential roles in various military and civil applications, such as defense security, UV communication, marine oil pollution monitoring, and health care. − Normally, wide band gap semiconductors (WBSs, e.g., ZnO, TiO 2 , SnO 2 , and GaN) are used to fabricate UVPDs. ,− Based on these WBS-based UVPDs, excellent photoelectric performances in terms of high responsivity, ultralow UV detection limit, and satisfactory stability have been achieved. − In spite of this, these inorganic WBSs are normally fabricated by using some sophisticated growth instruments, ,, like metal–organic vapor-phase epitaxy and molecular beam epitaxy, which significantly increased the fabrication costs. While some WBSs (e.g., ZnO and TiO 2 ) can be synthesized by using the low-cost solution method, the performances of the corresponding PDs are not satisfactory. , Hence, the low-cost and sensitive UVPDs should be further studied.…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet Photodetectors Based on Nanometer-Thick Films of the Narrow Band Gap Semiconductor PbS

Wang

Lin

Luo

et al. 2022

ACS Appl. Nano Mater.

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Ultraviolet photodetectors (UVPDs) which play important roles in military and civil applications are normally fabricated by using wide band gap semiconductors (WBSs) as building blocks. Unfortunately, the commercialization of UVPDs based on WBSs is often limited by their relatively high fabrication cost owing to the use of very complicated growth instruments. In this work, a sensitive UVPD based on non-WBS lead sulfide (PbS) with a relatively small band gap was proposed. Device analysis revealed that the UVPD made of 48.5 nm PbS nanofilm was highly sensitive to UV illumination at 365 nm. Specifically, the responsivity and specific detectivity under 365 nm illumination were 22.25 A W–1 and 4.97 × 1012 Jones, respectively, which are comparable to or better than most of the conventional WBS-based UVPDs. The PbS nanofilm-based UVPD also exhibits excellent environmental stability. Experimental results and simulations based on technology computer-aided design software confirmed that the abnormal properties of PbS nanofilms are related to the relatively thin thickness and wavelength-dependent absorption coefficients. These results open up an opportunity for narrow band gap semiconductors to realize low-cost-sensitive UVPDs in future optoelectronic devices and systems.

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“…In recent times, there has been a significant interest in developing various photodetectors based on metal oxide semiconductors [17][18][19][20]. For this purpose, a lot of work has been done to fabricate ultraviolet photodetectors based on wide band gap semiconductors [21][22][23][24]. However, for the visible photodetectors, often silicon was utilized [25].…”

Section: Introductionmentioning

confidence: 99%

Enhanced photodetection performance of sputtered cupric oxide thin film through annealing process

Tariq¹,

Afzal²,

Rafique³

2021

Preprint

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This study demonstrates an improvement in the photodetection response of a Cupric Oxide (CuO) thin film through the annealing process. The CuO thin film (400 nm thickness) was deposited on a silicon substrate using DC magnetron sputtering system. Annealing of the as-deposited film was carried out in a muffle furnace at 400 and 500 oC for two hours. X-ray diffraction pattern revealed the formation of a single phase CuO film whose crystallinity improved with increase of the annealing temperature. The field emission scanning electron microscopy indicated a compact and fine granular strcutre of the as-seposited film whereas the segregation and agglomeration of grains was observed after the film’s annealing. The photodetection performance of CuO film with Al contacts was investigated under the exposure of visible light (λ = 460 nm). The current-voltage graphs of as-deposited and annealed films displayed Schottky contact formation between the metal and semiconductor, owing to a lower work function of Al than that of the CuO. The photo-to-dark current ratio of the device was significantly enhanced after the film’s annealing. The increase in photocurrent became more pronounced upon increasing the light intensity from 58.4 to 511 µW/cm2. The maximum current gain and sensitivity values were found to be 66 and 7086.8 % respectively at 10V bias for the film annealed at 500 oC. The rise and fall time of the Al/CuO/Al photodetector was decreased after the film’s annealing.

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Ultraviolet photodetectors based on wide bandgap oxide semiconductor films

Cited by 55 publications

References 140 publications

Current State of Ga2O3-Based Electronic and Optoelectronic Devices. Brief Review

Current State of Ga2O3-Based Electronic and Optoelectronic Devices. Brief Review

Ultraviolet Photodetectors Based on Nanometer-Thick Films of the Narrow Band Gap Semiconductor PbS

Enhanced photodetection performance of sputtered cupric oxide thin film through annealing process

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