A high-power fixed-tuned millimeter-wave balanced frequency doubler

Porterfield, David W.; Crowe, T.W.; Bradley, Richard F.; Erickson, N. R.

doi:10.1109/22.754875

Cited by 87 publications

(36 citation statements)

References 8 publications

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“…The cross-bar balanced mixers and multipliers are preferred in millimeterwave bands for merits of low loss, high isolation and broad band, owing to the inherent mode isolation between the radio frequency (RF) and local oscillator (LO) signals or between the input and output signals [1][2][3][4][5][6][7][8]. In cross-bar mixers, the cross-bar balanced architecture with a pair of balanced diodes physically locates inside either the LO waveguide [1] or the RF waveguide [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…In cross-bar mixers, the cross-bar balanced architecture with a pair of balanced diodes physically locates inside either the LO waveguide [1] or the RF waveguide [2][3][4]. In cross-bar multipliers, the cross-bar balanced architecture with a pair of balanced diodes physically locates inside either the input waveguide [5][6][7] or the output waveguide [8]. However, the design of the cross-bar hybrid relies on the cross-bar structure with a pair of balanced diodes, which cannot be pre-designed as a simplex hybrid like the rat-race hybrid or the others [9,10].…”

Section: Introductionmentioning

confidence: 99%

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An Improved Wideband 180-Degree Hybrid Applied to Balanced Mixer

Zhao¹,

Zhang²,

Liu³

et al. 2015

PIER Letters

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Abstract-In this paper, an improved wideband millimeter-wave 180 • hybrid is proposed to apply to balanced mixers and multipliers. The proposed hybrid consists of a transition of standard waveguide to suspended coplanar waveguide (SCPW) and a transition of SCPW to suspended stripline. According to the inherent electromagnetic field characteristics of the two transitions, the proposed hybrid has merits of broadband power distribution and high isolation, which does not rely on resonant circuits. The measured insertion losses and isolation of two transitions at Ka-band are typically 1.4 dB and 25 dB, respectively. To verify the application of the proposed hybrid, A W-band single balanced mixer based on the hybrid has been designed and fabricated. The measured single-sideband (SSB) conversion losses of the fabricated mixer are less than 9.5 dB for the radio frequency (RF) range from 80 to 108 GHz. The presented hybrid has been proven to be efficient for the design of millimeter-wave balanced mixers and could be well applied in multipliers and other integrated circuits.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

An Improved Wideband 180-Degree Hybrid Applied to Balanced Mixer

Zhao¹,

Zhang²,

Liu³

et al. 2015

PIER Letters

View full text Add to dashboard Cite

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“…In general, active frequency multipliers are preferred because they offer lower conversion loss (or even conversion gain), wider bandwidth, and better isolation [4,5].…”

Section: Introductionmentioning

confidence: 99%

“…Multiplier MMICs with an output power of less than 0 dBm in the E-band frequency range are commercially available from Hittite and Agilent Technologies [5,6].…”

Section: Introductionmentioning

confidence: 99%

High Output Power and High Fundamental Leakage Suppression Frequency Doubler MMIC for E-Band Transceiver

Chang¹,

Yom²

2014

Journal of electromagnetic engineering and science

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An active frequency doubler monolithic microwave integrated circuit (MMIC) for E-band transceiver applications is presented in this letter. This MMIC has been fabricated in a commercial 0.1-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process on a 2-mil thick substrate wafer. The fabricated MMIC chip has been measured to have a high output power performance of over 13 dBm with a high fundamental leakage suppression of more than 38 dBc in the frequency range of 71 to 86 GHz under an input signal condition of 10 dBm. A microstrip coupled line is used at the output circuit of the doubler section to implement impedance matching and simultaneously enhance the fundamental leakage suppression. The fabricated chip is has a size of 2.5 mm × 1.2 mm. This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/ by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. ⓒ

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“…The design of varactor multipliers is a well-established topic and the fundamental issues have been understood since the work of Penfield and Rafuse [85]. From this foundation, a number of preferred multiplier circuit topologies have emerged -notably, the balanced doubler [56], [86] and tripler [87], [88], [89], [90] configurations that employ anti-parallel or anti-series connected diodes. These circuit configurations have become commonplace due to their inherent isolation of even and odd-order harmonics, eliminating the need for filters.…”

Section: Quasi-vertical Schottky Diode Multipliersmentioning

confidence: 99%

Submillimeter-Wave Quasi-Vertical GaAs Schottky Diodes Integrated on Silicon Membranes

Alijabbari¹

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GaAs Schottky diodes are the central component of Terahertz (THz) metrology instrumentation. The frequency translating property of the Schottky diode is used in ground and space based observatories and for characterization of other THz devices. As detectors, GaAs Schottky diodes are used for measuring signal power levels, as mixers they are used in heterodyne receivers, and as variable capacitors they are used in frequency multipliers.The focus of this dissertation is the integration of GaAs Schottky diodes on silicon-on-insulator (SOI) substrate carriers to better control the device parasitics and to accommodate assembly of fully integrated diode-based circuits. During research into this process, a unique quasi-vertical diode geometry was developed in which the ohmic contact lies directly below the Schottky anode. While similar in concept to the first whisker contacted Schottky diodes, the quasi-vertical diode is nevertheless a planar device that is readily integrated with other components supported by the SOI substrate, including beamleads for electrical connection. To illustrate the advantages of this technology, 40-to-80 GHz doublers and a new 40-to-160 GHz quadrupler were designed and implemented using the quasi-vertical diodes and heterogeneous integration methods developed in this research. These multipliers are the first demonstrated fully-integrated GaAs varactor circuits fabricated on SOI, yielding record performance in multiplication efficiency, and demonstrating the benefits of the novel diode architecture and substrate replacement technology.ii

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A high-power fixed-tuned millimeter-wave balanced frequency doubler

Cited by 87 publications

References 8 publications

An Improved Wideband 180-Degree Hybrid Applied to Balanced Mixer

An Improved Wideband 180-Degree Hybrid Applied to Balanced Mixer

High Output Power and High Fundamental Leakage Suppression Frequency Doubler MMIC for E-Band Transceiver

Submillimeter-Wave Quasi-Vertical GaAs Schottky Diodes Integrated on Silicon Membranes

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