1993
DOI: 10.1109/75.219810
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A high-power millimeter-wave frequency doubler using a planar diode array

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Cited by 43 publications
(4 citation statements)
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“…Multipliers using two whiskered diodes in parallel have been reported [20]. An integrated array of four GaAs planar varactors has been used for a highefficiency frequency doubler [21] for 50-200 mW input powers, efficiencies of 20-25 per cent have been attained at 174 GHz. This doubler has been investigated theoretically using finite-element analysis of the varactor and supplemented by analogue measurements [22].…”
Section: First-stage Multipliersmentioning
confidence: 99%
“…Multipliers using two whiskered diodes in parallel have been reported [20]. An integrated array of four GaAs planar varactors has been used for a highefficiency frequency doubler [21] for 50-200 mW input powers, efficiencies of 20-25 per cent have been attained at 174 GHz. This doubler has been investigated theoretically using finite-element analysis of the varactor and supplemented by analogue measurements [22].…”
Section: First-stage Multipliersmentioning
confidence: 99%
“…With the advent of high-quality submillimeter-wave planar diode technology, however, multidiode circuit fabrication has become realizable. Balanced multipliers and mixers utilizing planar diodes have demonstrated better performance than similar whisker-contacted structures up to 200 GHz [2], [3]. In this letter, a new approach is introduced where a planar frequency doubler circuit with a fully open antenna architecture combines device and circuit symmetries to yield an extremely simple and compact design with inherent port-toport isolation.…”
Section: Introductionmentioning
confidence: 99%
“…However, at millimeter-wavelength Schottky planar discrete diodes started to give better performance due to the use of multiple anodes in balanced configurations. Erickson's balanced doublers, proposed and demonstrated in [48][49][50], have become a standard topology for frequency multiplication due to their good performance. Gallium arsenide (GaAs)-based heterostructure barrier varactors (HBVs) were introduced by Kollberg and Rydberg at the University of Chalmers [51], Sweden, as alternate diodes, and this technology took a significant turn in the late 1990s when Lippens and Mélique at IEMN, France, introduced indium phosphide (InP)-based multiple barrier devices [52].…”
Section: Frequency Up-conversion Of Microwaves In Solid-state Diodesmentioning
confidence: 99%