A High Responsivity Self-Powered Solar-Blind DUV Photodetector Based on a Nitrogen-Doped Graphene/β-Ga₂O₃ Microwire p–n Heterojunction

Wang, Yujie; Fu, Rongpeng; Wang, Yuefei; Li, Bingsheng; Xu, Haiyang; Shen, Aidong; Liu, Yichun

doi:10.1109/led.2022.3172728

Cited by 21 publications

(7 citation statements)

References 30 publications

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“…At the same time, the Te nanosheet photodetector exhibits clear short-wave infrared imaging at 2 µm (Figure 59 can be amplified through waveguide structures, and resonant cavity structures. As shown in Figure 59(i), the present silicon-BP HPWG PD enhances light absorption in BP and shortens the carrier transport time through the structural design of the optical waveguide (Figure 59(i)) [702]. In summary, the development of 2D materialbased infrared photodetectors is expected to grow and mature gradually, with the potential to achieve practical and commercial applications.…”

Section: Infrared Photodetectorsmentioning

confidence: 94%

Two-dimensional materials for future information technology: status and prospects

Qiu,

Yu,

Zhao

et al. 2024

Sci. China Inf. Sci.

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Over the past 70 years, the semiconductor industry has undergone transformative changes, largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional (2D) materials like transition metal dichalcogenides (TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

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Section: Infrared Photodetectorsmentioning

confidence: 94%

Two-dimensional materials for future information technology: status and prospects

Qiu,

Yu,

Zhao

et al. 2024

Sci. China Inf. Sci.

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“…Heterojunction devices by combining Ga 2 O 3 with other materials such as SnO 2 [136], ZnO [137], graphene [138,139], CuO [140], V 2 O 5 [141], NiO [142], CFP [143], and PANI [144] have been fabricated to optimize the performance of Ga 2 O 3 based photodetectors. For instance, Sn-doped Ga 2 O 3 incorporated with SnO 2 nanostructures was grown on a cplane sapphire substrate, followed by the fabrication of an MSM photodetector using Pt as electrodes [136].…”

Section: Ga 2 O 3 Heterostructuresmentioning

confidence: 99%

“…The MLG/Ga 2 O 3 heterojunction device presented pronounced rectifying characteristics under DUV light illumination (Figure 18c). Wang et al fabricated high-responsivity DUV photodetectors based on a nitrogen-doped graphene (NGr)/β-Ga 2 O 3 microwire p-n heterojunction, as shown in Figure 18d [139]. The photodetector exhibited an ultrahigh responsivity of 360 mA/W and an ultrahigh light-todark ratio of 10 4 under 0 V and 235 nm illumination with a light intensity of 12.2 µW/cm 2 (Figure 18e,f).…”

Section: Ga 2 O 3 Heterostructuresmentioning

confidence: 99%

Deep Ultraviolet Photodetector: Materials and Devices

Fang

et al. 2023

Crystals

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The application of deep ultraviolet detection (DUV) in military and civil fields has increasingly attracted the attention of researchers’ attention. Compared with the disadvantages of organic materials, such as complex molecular structure and poor stability, inorganic materials are widely used in the field of DUV detection because of their good stability, controllable growth, and other characteristics. Rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional detectors. Herein, the development history and types of DUV detectors are briefly introduced. Typical UWBG detection materials and their preparation methods, as well as their research and application status in the field of DUV detection, are emphatically summarized and reviewed, including III-nitride semiconductors, gallium oxide, diamond, etc. Finally, problems pertaining to DUV detection materials, such as the growth of materials, the performance of devices, and their future development, are also discussed.

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“…[21] In 2022, Wang et al constructed a p-n junction using β-Ga 2 O 3 and nitrogen-doped graphene (NGr), which exhibited a high responsivity of 360 mA W −1 under a 0 V bias. [22] Therefore, the introduction of NGr holds great promise for the preparation of high-performance PDs.…”

Section: Introductionmentioning

confidence: 99%

Deep Ultraviolet Photodetector with Ultrahigh Responsivity based on a Nitrogen‐Doped Graphene‐Modified Polypyrrole/SnO₂ Organic/Inorganic p–n Heterojunction

Song

Wang

et al. 2023

Adv Materials Inter

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Deep ultraviolet monitoring is realized via a high crystal quality SnO2 microwire (MW)‐based photodetector (PD). This is then combined with 2D nitrogen‐doped graphene (NGr), conducting polymer polypyrrole (PPy), and an in situ polymerization‐fabricated composite film PPy‐NGr to construct an organic–inorganic p–n heterojunction PD. The long response time brought on by the oxygen adsorption of SnO2 MW is greatly decreased via coating with the aforementioned materials. A defect response is created by the surface dangling bonds of SnO2 MW, which can be effectively suppressed by the PPy. Absorption in the deep ultraviolet region (<240 nm) by PPy results in a blue shift of the response peak of the PPy/SnO2 heterojunction PD compared to that of a single SnO2 PD. The introduction of NGr improves the detection performance by providing a smoother energy band migration to reduce photogenerated carrier recombination and stacking at the potential barrier. The ultrahigh responsivity of PPy‐NGr/SnO2 PD is 4594.25 A W−1 and the detectivity is 6.47 × 1011 Jones, 40 and nine times greater, respectively, than those of a PPy/SnO2 PD under a 5 V reverse bias and 240‐nm light irradiation (18.75 µW cm−2). The novel strategy provides a reference for the future design of high‐performance heterojunction PDs.

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A High Responsivity Self-Powered Solar-Blind DUV Photodetector Based on a Nitrogen-Doped Graphene/β-Ga₂O₃ Microwire p–n Heterojunction

Cited by 21 publications

References 30 publications

Two-dimensional materials for future information technology: status and prospects

Two-dimensional materials for future information technology: status and prospects

Deep Ultraviolet Photodetector: Materials and Devices

Deep Ultraviolet Photodetector with Ultrahigh Responsivity based on a Nitrogen‐Doped Graphene‐Modified Polypyrrole/SnO₂ Organic/Inorganic p–n Heterojunction

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A High Responsivity Self-Powered Solar-Blind DUV Photodetector Based on a Nitrogen-Doped Graphene/β-Ga₂O₃ Microwire p–n Heterojunction

Cited by 21 publications

References 30 publications

Two-dimensional materials for future information technology: status and prospects

Two-dimensional materials for future information technology: status and prospects

Deep Ultraviolet Photodetector: Materials and Devices

Deep Ultraviolet Photodetector with Ultrahigh Responsivity based on a Nitrogen‐Doped Graphene‐Modified Polypyrrole/SnO2 Organic/Inorganic p–n Heterojunction

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Deep Ultraviolet Photodetector with Ultrahigh Responsivity based on a Nitrogen‐Doped Graphene‐Modified Polypyrrole/SnO₂ Organic/Inorganic p–n Heterojunction