A high sensitivity position-sensitive detector based on Au–SiO<sub>2</sub>–Si structure

Chi, L.; Zhu, Pengfei; Wang, Hui; Huang, Xiaoan; Li, Xiangting

doi:10.1088/2040-8978/13/1/015601

Cited by 15 publications

(13 citation statements)

References 22 publications

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“…It can also be seen from Figure f that LPE performs diversely on different semiconductor substrates. As mentioned above, different metal films and thickness induce diverse spectral response and sensitivity, demonstrating the importance of the categories and configurations of metal materials on the photoelectric performance of MS or MOS systems …”

Section: Lateral Photovoltaic Effectmentioning

confidence: 95%

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Dong

Wang

2019

Annalen der Physik

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Functionalization of photoelectric effect in nanostructures is presenting a promising strategy for humans to achieve precise detection and efficient transformation. Due to the high applied value, numerous materials and constructions are adopted for photoelectric effect to deliver on its potential performance. Among these functional materials, metal-semiconductor (MS) or metal-oxide-semiconductor (MOS) systems own unparalleled advantage including reliable stability, superb physical performance, and simple fabrication process. Herein, two types of photoelectric effect, lateral photovoltaic and photo-induced resistance effect, in nanostructure MS or MOS systems are reviewed. These effects have great potential in applications and will play a beneficial role in future investigations. In addition, how each component of the system contributes to the photoelectric properties and responds to external fields are detailed, suggesting future study directions in photoelectric fields.

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Section: Lateral Photovoltaic Effectmentioning

confidence: 95%

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Dong

Wang

2019

Annalen der Physik

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“…Линейные зависимости ЛФЭ наблюдались и в МОП структурах на основе n-Si с пленками металлов Co [8,12,13], Ti [13], Au [14], Fe 3 O 4 [17], Ni [18]. Такие зависимости характеризуются чувствительностью κ = d(LPV )/dx [13,16]…”

Section: методика экспериментаunclassified

“…ЛФЭ возникает при неравномерном освещении pn-перехода в результате латеральной диффузии и рекомбинации фотогенерированных электроннодырочных пар [1][2][3][4]. Подобный эффект также исследовался в структурах металл−полупроводник (МП) [6][7][8][9][10][11] и металл−оксид−полупроводник (МОП) [12][13][14][15][16][17][18]. Этот эффект применяется в позиционно-чувствительных детекторах, поскольку при смещении светового пятна латеральное фотонапряжение меняется линейно [1,4,5].…”

Section: Introductionunclassified

“…Большинство работ по исследованию ЛФЭ было выполнено в МП и МОП структурах на основе n-Si [8][9][10][12][13][14]16,17], тогда как в структурах на основе p-Si подобные исследования проводились в меньшем объеме [6,7,10,15]. Это обусловлено большей практической значимостью кремния n-типа для фотовольтаики из-за превышения времени жизни неосновных носителей в нем по сравнению с кремнием p-типа [18].…”

Section: Introductionunclassified

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Сравнительное исследование латерального фотовольтаического эффекта в структурах Fe-=SUB=-3-=/SUB=-O-=SUB=-4-=/SUB=-/SiO-=SUB=-2-=/SUB=-/n-Si и Fe-=SUB=-3-=/SUB=-O-=SUB=-4-=/SUB=-/SiO-=SUB=-2-=/SUB=-/p-Si

Pisarenko¹,

Балашев²,

Викулов³

et al. 2018

Физика Твердого Тела

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Представлены результаты сравнительного исследования латерального фотовольтаического эффекта в структурах Fe 3 O 4 /SiO 2 /n-Si и Fe 3 O 4 /SiO 2 /p-Si. В обеих структурах латеральное фотонапряжение максимально вблизи измерительных контактов, но имеет противоположный знак. При смещении светового пятна от измерительных контактов оно линейно меняется в структуре Fe 3 O 4 /SiO 2 /n-Si и экспоненциально затухает в структуре Fe 3 O 4 /SiO 2 /p-Si. Установлено, что инверсия полярности фотонапряжения при смене типа проводимости кремния обусловлена наличием интерфейсных состояний на границе раздела SiO 2 /Si. Обнаружено, что для обеих структур наблюдается экстремальная толщинная зависимость фотонапряжения с оптимальной толщиной пленки Fe 3 O 4 ∼ 50 nm. Работа частично поддержана Комплексной программой фундаментальных исследований ДВО РАН "

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“…In tracking or remote measurement systems, high sensitivity and ultra-weak light detection capability are crucial, which determine the accuracy and operating distance of the systems. Heterojunction structures, including silicon (Si) P-N or P-I-N junctions [5,6], and metal-Si Schottky junctions [7][8][9][10], are the most common structures for current PSD. The sensitivity of these devices is still not satisfactory and they normally operate under μW or mW incident light.…”

Section: Introductionmentioning

confidence: 99%

Ultrasensitive graphene position-sensitive detector induced by synergistic effects of charge injection and interfacial gating

Wang

Sun

et al. 2020

Nanophotonics

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AbstractPosition-sensitive detectors (PSDs) are essential components to the realization of displacement and vibration detection, optical remote control, robot vision, etc. The light sensitivity of PSDs is a crucial parameter, which determines the operating range or detection accuracy of the measurement systems. Here, we devise an ultrasensitive PSD based on graphene/Si hybrid structure by using the synergistic effect of charge injection and interfacial gating. Photogenerated carriers in Si are separated by the built-in electric field at the surface. Holes diffuse laterally in inversion layer and then inject into graphene to form photoresponse. Meanwhile, the electrons in bulk Si that move to the area under graphene cause a gating effect, thus introducing a high gain. With the benefit of synergistic effect, the detection limit power of our device can be pushed to pW level, which is reduced by two orders of magnitude compared to previously reported graphene based PSD. Furthermore, even for infrared light of 1064 nm, the PSD still retains position sensitivity to 1 nW weak light, as well as fast response speed at the μs level. This work provides the potential of graphene as a promising material for ultraweak light position sensitive detection.

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A high sensitivity position-sensitive detector based on Au–SiO₂–Si structure

Cited by 15 publications

References 22 publications

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Сравнительное исследование латерального фотовольтаического эффекта в структурах Fe-=SUB=-3-=/SUB=-O-=SUB=-4-=/SUB=-/SiO-=SUB=-2-=/SUB=-/n-Si и Fe-=SUB=-3-=/SUB=-O-=SUB=-4-=/SUB=-/SiO-=SUB=-2-=/SUB=-/p-Si

Ultrasensitive graphene position-sensitive detector induced by synergistic effects of charge injection and interfacial gating

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A high sensitivity position-sensitive detector based on Au–SiO2–Si structure

Cited by 15 publications

References 22 publications

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Сравнительное исследование латерального фотовольтаического эффекта в структурах Fe-=SUB=-3-=/SUB=-O-=SUB=-4-=/SUB=-/SiO-=SUB=-2-=/SUB=-/n-Si и Fe-=SUB=-3-=/SUB=-O-=SUB=-4-=/SUB=-/SiO-=SUB=-2-=/SUB=-/p-Si

Ultrasensitive graphene position-sensitive detector induced by synergistic effects of charge injection and interfacial gating

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A high sensitivity position-sensitive detector based on Au–SiO₂–Si structure