A high-speed cryogenic SiGe channel combiner IC for large photon-starved SNSPD arrays

Bardin, Joseph C.; Ravindran, Prasana; Chang, Su-Wei; Kumar, Raghavan; Stern, Jeffrey A.; Shaw, Matthew D.; Russell, Damon; Farr, William H.

doi:10.1109/bctm.2013.6798179

Cited by 14 publications

(10 citation statements)

References 4 publications

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“…The comparator is a clocked design that has been described in detail previously. 8 To prevent a single pixel from blocking all other channels during its slow recovery phase, a clocked edgedetector circuit follows each comparator and provides a single clock cycle pulse each time a rising edge occurs. A schematic diagram of the edge detector appear in Fig.…”

Section: Design Of An Eight-input Channel Combinermentioning

confidence: 99%

“…4(b) and further details regarding the sub-circuits are provided in. 8 After edge-detection, the outputs of each stream are combined into a single output using a binary tree of or-gates, with the final or-gate driving an open-collector stage that serves to drive an off-chip differential load. Careful attention was paid to the symmetry of both the clock distribution as well as the channel combining circuitry to ensure that all channels are phase matched and there is no glitching in the output signal.…”

Section: Design Of An Eight-input Channel Combinermentioning

confidence: 99%

“…8 In order to maximize the probability of success using these coarse models, transistor stacking was avoided and simple differential circuits with resistor-based current sources were employed. Schematic diagrams for key stages are shown in Fig.…”

Section: Design Of An Eight-input Channel Combinermentioning

confidence: 99%

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Cryogenic SiGe integrated circuits for superconducting nanowire single photon detector readout

et al. 2014

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There is a growing interest in developing systems employing large arrays of SNSPDs. To make such instruments practical, it is desirable to perform signal processing before transporting the detector outputs to room temperature. We present a cryogenic eight-channel pixel combiner circuit designed to amplify, digitize, edge detect, and combine the output signals of an array of eight SNSPDs. The circuit has been fabricated and measurement results agree well with expectation. The paper will conclude with a summary of ongoing work and future directions.

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Section: Design Of An Eight-input Channel Combinermentioning

confidence: 99%

Section: Design Of An Eight-input Channel Combinermentioning

confidence: 99%

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Cryogenic SiGe integrated circuits for superconducting nanowire single photon detector readout

et al. 2014

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“…Silicon-germanium heterojunction bipolar transistors (HBTs) are widely used in microwave applications such as radar and communication systems [1,2] and show potential in space science [3] and imaging applications, [4][5][6] owing to their competitive microwave performance combined with ease of integration with the CMOS process, high yield, and low cost relative to III-V technologies [7,8]. SiGe HBTs are now approaching the THz domain due to fabrication process advancements that enable the continued scaling of key parameters such as base width and resistance [2,9].…”

Section: Introductionmentioning

confidence: 99%

Quasiballistic electron transport in cryogenic SiGe HBTs studied using an exact, semi-analytic solution to the Boltzmann equation

Naik

Minnich

2021

Journal of Applied Physics

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Silicon–germanium heterojunction bipolar transistors (HBTs) are of interest as low-noise microwave amplifiers due to their competitive noise performance and low cost relative to III–V devices. The fundamental noise performance limits of HBTs are thus of interest, and several studies report that quasiballistic electron transport across the base is a mechanism leading to cryogenic non-ideal IV characteristics that affect these limits. However, this conclusion has not been rigorously tested against theoretical predictions because prior studies modeled electron transport with empirical approaches or approximate solutions of the Boltzmann equation. Here, we study non-diffusive transport in narrow-base SiGe HBTs using an exact, semi-analytic solution of the Boltzmann equation based on an asymptotic expansion approach. We find that the computed transport characteristics are inconsistent with experiments, implying that quasiballistic electron transport is unlikely to be the origin of cryogenic non-ideal IV characteristics. Our work helps to identify the mechanisms governing the lower limits of the microwave noise figure of cryogenic HBT amplifiers.

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“…The interface and readout of such arrays using room temperature electronics are impractical due to heat load and SNR degradation caused by attenuation of the cables. Moreover, the stringent low noise temperature requirements for the readout could only be achieved by operating at cryogenic temperatures [5].…”

Section: Introductionmentioning

confidence: 99%

Characterization and Analysis of On-Chip Microwave Passive Components at Cryogenic Temperatures

Patra

Mehrpoo

Ruffino

et al. 2020

IEEE J. Electron Devices Soc.

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This paper presents the characterization and modeling of microwave passive components in TSMC 40-nm bulk CMOS, including metal-oxide-metal (MoM) capacitors, transformers, and resonators, at deep cryogenic temperatures (4.2 K). To extract the parameters of the passive components, the pad parasitics were de-embedded from the test structures using an open fixture. The variations in capacitance, inductance and quality factor are explained in relation to the temperature dependence of the physical parameters, and the resulting insights on the modeling of passives at cryogenic temperatures are provided. Modeling the characteristics of on-chip passive components, presented for the first time down to 4.2 K, is essential in designing cryogenic CMOS radio-frequency integrated circuits, a promising candidate to build the electronic interface for scalable quantum computers.

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A high-speed cryogenic SiGe channel combiner IC for large photon-starved SNSPD arrays

Cited by 14 publications

References 4 publications

Cryogenic SiGe integrated circuits for superconducting nanowire single photon detector readout

Cryogenic SiGe integrated circuits for superconducting nanowire single photon detector readout

Quasiballistic electron transport in cryogenic SiGe HBTs studied using an exact, semi-analytic solution to the Boltzmann equation

Characterization and Analysis of On-Chip Microwave Passive Components at Cryogenic Temperatures

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